Mississippi State University

Power Integrations, Inc.

Semisouth Laboratories, Inc.

Ss Sc IP, LLC

Other

Fedex Corporate Services, Inc.

Federal Express Corporation

Michael S Mazzola

Jeffrey Casady

Lin Cheng

Reuben F Burch, V

Howard McKinney

Robin Lynn Kelley

James R Gafford

John E Ball

Tyler J Hannis

Yucheng Liu

Joseph Neil Merrett

Stephen E Saddow

Sherif Abelwahed

Matt Doude

Igor Sankin

Andrew M LeClair

Geoffrey Ewald Carter

Yaroslav Koshka

Pan Wei

Dennison W Iacomini

Lucas D Cagle

Masood Shahverdi

Collin S Davenport

Robin Schrader

Andrew R Hegman

Benjamin Blalock

Tasmia Reza

Jian Shi

Howard G Mcckinney

Reuben F Burch V

Jeffrey B Casady

Geoffrey E Carter

V Reuben Burch

Andrew M Leclair

An improved retrofit assembly for ground support equipment providing autonomous operation of the logistics ground support equipment (GSE). The assembly has a refit control system attached to the GSE (with a vehicle dynamics control processor and a data preprocessing control processor), retrofitted proprioceptive sensors coupled to the vehicle dynamics control processor monitoring operating parameters and characteristics of the GSE, retrofitted exteroceptive sensors coupled to the data preprocessing control processor that monitor an exterior environment of the GSE, and refit actuators for different control elements on the GSE and to autonomously alter motion of the GSE. The refit control system programmatically receives sensor data from the proprioceptive sensors and exteroceptive sensors; optimizes a path for the GSE based upon the different sensor data; and activates at least one of the actuators according to the optimized path for the GSE.

Enhanced systems, apparatus, and method for improved automated and autonomous operation of logistics ground support equipment

Enhanced systems, apparatus, and methods for improved automated and autonomous operation of logistics ground support equipment

Enhanced systems and methods for collision avoidance of a high value asset with reflective beacons around it using multi-sensor data fusion on a mobile industrial vehicle. The system has a sensing processing system with a LiDAR and camera sensors, and a multi-processor module responsive to the different sensors. The sensing processing system fuses the different sensor data to locate the reflective beacons. A model predictive controller on the vehicle determines possible control solutions where each defines a threshold allowable speed for the vehicle at discrete moments based upon an estimated path to a breaching point projected from the reflective beacons, and then identifies an optimal one of the control solutions based upon a performance cost function and associated with an optimal threshold allowable speed. The system has a vehicle actuator configured to respond and alter vehicle movement to avoid a collision when the vehicle exceeds the optimal threshold allowable speed.

Systems and methods for enhanced collision avoidance on logistics ground support equipment using multi-sensor detection fusion

The present invention provides a novel system and method for a power management strategy for series hybrid power systems, such as for vehicles, with limited electrical energy storage capacity that distributes instantaneous power between a source of chemical energy and a small energy storage system (ESS) efficiently. The invention provides for minimizing the energy storage system while simultaneously allowing the chemical to electrical energy converter, e.g., an internal combustion motor/engine paired with an electrical generator and/or a fuel cell power source, to operate in pre-defined efficient regions of the power user's, or vehicle's, fuel efficiency map.

Bandwidth-based methodology for controlling and optimally designing a hybrid power system

Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN diodes. The devices have graded p-type semiconductor layers and/or regions formed by epitaxial growth. The methods do not require ion implantation. The devices can be made from a wide-bandgap semiconductor material such as silicon carbide (SiC) and can be used in high temperature and high power applications.

Vertical junction field effect transistors and diodes having graded doped regions and methods of making

A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.

Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein

An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype.

Optically controlled silicon carbide and related wide-bandgap transistors and thyristors

A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer.

Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy

A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p-n junctions and self-planarizing epitaxially over-grown second n-type drift regions between and, optionally, on top of the p-type regions. The device may include an edge termination structure such as an exposed or buried Pguard ring, a regrown or implanted junction termination extension (JTE) region, or a 'deep' mesa etched down to the substrate. The Schottky contact to the second n-type drift region and the ohmic contact to the p-type region together serve as an anode. The cathode can be formed by ohmic contact to the n-type region on the backside of the wafer. The devices can be used in monolithic digital, analog, and microwave integrated circuits.

Junction barrier schottky rectifiers having epitaxially grown P+-N methods of making

Components, systems and methods for generating variable frequency AC voltage from a DC power supply are described. The components include a full-bridge (FB) parallel load resonant (PLR) converter which operates in discontinuous conduction mode. The PLR converter includes MOSFETs in an H-bridge configuration and employs a topology which minimizes inductance. The PLR converter can be coupled to a single or poly-phase bridge for use as an inverter. The inverter can be used to produce an AC sinusoidal waveform from a low voltage, high current DC power supply. Systems and techniques for modulating the output from the PLR converter to produce an AC sinusoidal waveform having desired characteristics, including frequency and voltage, are also provided. The PLR converter can also be coupled to a rectifier for use as a DC-DC converter.

Power conversion components, systems and methods

Growing community of inventors

Mint Hill, NC, United States of America

Michael S Mazzola