Cabot Corporation

Advanced Technology Materials, Inc.

Michael S Darsillo

David J Fluck

Rudiger Laufhutte

Karl E Boggs

Peter Wrschka

Mackenzie E King

Jun Liu

Thomas H Baum

Jeffrey F Roeder

Michael D Morris

Michael A Lucarelli

Rex J Field

Jason R Hilton

David Daniel Bernhard

Dhaval Arun Doshi

James J Welch

Stephane F Rouanet

Ulrich Bauer

Joachim K Floess

Jens Fründt

Jens Frundt

A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.

High throughput chemical mechanical polishing composition for metal film planarization

A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.

Method of passivating chemical mechanical polishing compositions for copper film planarization processes

Aerogel particles having a mean particle size less than 1 micron, products containing the same, processes of making the same, and uses thereof are described. A process of making the particle is also described wherein starting aerogel particles are homogenized or wet milled. The starting aerogel particles can be surface treated during the milling process to prevent agglomeration or aggregation. The aerogel particles can be used in a variety of products and applications.

Aerogel particles and methods of making same

A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper.

Chemical mechanical polishing compositions for copper and associated materials and method of using same

The invention provides a recording medium comprising a substrate having a glossy coating thereon, wherein the glossy coating comprises a binder and alumina particles that are aggregates of primary particles.

Recording medium with glossy coating containing alumina

A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.

Passivative chemical mechanical polishing composition for copper film planarization

A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.

This invention pertains to an ink jet recording medium comprises a flexible substrate and a coating composition coated on at least one surface of the substrate, wherein the coating composition comprises the product formed from the contact between fumed silica particles and at least one aminoorganosiloxane. The invention also pertains to a method for the preparation of such an ink jet recording medium and to methods for the preparation of a coating composition and a dispersion useful in the preparation of such an ink jet recording medium.

Ink jet recording medium comprising amine-treated silica

A recording medium comprising a substrate having a glossy coating thereon, wherein the glossy coating comprises a binder and alumina particles that are aggregates of primary particles.

Recording medium

The present invention provides a recording medium comprising a substrate having a glossy coating thereon, wherein the glossy coating comprises cationic silica. The cationic silica comprises silica particles having a mean diameter of less than about 1 &mgr;m that have been contacted with at least one aluminum compound. The present invention also provides an aqueous dispersion of cationic silica, a coating composition comprising it, and methods of preparing the dispersion, coating composition, and recording medium.

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Clifton Park, NY, United States of America

Michael S Darsillo