Infineon Technologies Ag

Infineon Technologies Austria Ag

Michael Rüb

Franz Hirler

Armin Willmeroth

Thorsten Meyer

Uwe Wahl

Markus Schmitt

Carolin Tolksdorf

Carsten Schaeffer

Hans-Joachim Schulze

Anton Mauder

Frank Dieter Pfirsch

Roland Rupp

Hans Weber

Michael Treu

Dirk Ahlers

Herbert Schäfer

Stefan Sedlmaier

Jens-Peer Stengl

Manfred Pippan

Carsten Schäffer

Gerald Deboy

A trench transistor having a semiconductor body includes a source region, a body region, a drain region electrically connected to a drain contact, and a gate trench including a gate electrode which is isolated from the semiconductor body. The gate electrode is configured to control current flow between the source region and the drain region along at least a first side wall of the gate trench. The trench transistor further includes a doped semiconductor region having dopants introduced into the semiconductor body through an unmasked part of the walls of a trench.

Trench transistor having a doped semiconductor region

A method for production of doped semiconductor regions in a semiconductor body of a lateral trench transistor includes forming a trench in the semiconductor body and introducing dopants into at least one area of the semiconductor body that is adjacent to the trench, by carrying out a process in which dopants enter the at least one area through inner walls of the trench.

Lateral trench transistor, as well as a method for its production

A semiconductor device includes a first semiconductor substrate of a first band-gap material and a second semiconductor substrate of a second band-gap material. The second band-gap material has a lower band-gap than the first band-gap material. A heterojunction is formed between the first semiconductor substrate and the second semiconductor substrate substantially in a first plane. The semiconductor device further includes, in a cross-section which is perpendicular to the first plane, a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type both of which extend from the second semiconductor substrate at least partially into the first semiconductor substrate. The first and second semiconductor regions are spaced in the first semiconductor substrate from each other in a direction parallel to the first plane by a first distance which is arranged in an area proximate to the heterojunction and which is larger than a second distance which is arranged in an area distal to the heterojunction.

Heterojunction semiconductor device and method

A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric.

Method for fabricating a semiconductor component

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Faak am See, Austria

Michael Rüb