Micron Technology Incorporated

Michael Roth

Dale Herber Hiscock

Markus H Geiger

John H Gentry

Anthony M Geidl

Michael J Scott

Evan C Pearson

Greg S Gatlin

Lael H Matthews

Tyler J Gomm

Debra M Bell

Eric A Becker

Tyrel Z Jensen

Robert Tamlyn

Memory devices and systems with post-packaging master die selection, and associated methods, are disclosed herein. In one embodiment, a memory device includes a plurality of memory dies. Each memory die of the plurality includes a command/address decoder. The command/address decoders are configured to receive command and address signals from external contacts of the memory device. The command/address decoders are also configured, when enabled, to decode the command and address signals and transmit the decoded command and address signals to every other memory die of the plurality. Each memory die further includes circuitry configured to enable, or disable, or both individual command/address decoders of the plurality of memory dies. In some embodiments, the circuitry can enable a command/address decoder of a memory die of the plurality after the plurality of memory dies are packaged into a memory device.

Memory with post-packaging master die selection

Memory devices and systems with adjustable through-silicon via (TSV) delay, and associated methods, are disclosed herein. In one embodiment, an apparatus includes a plurality of memory dies and a TSV configured to transmit signals to or receive signals from the plurality of memory dies. The apparatus further includes circuitry coupled to the TSV and configured to introduce propagation delay onto signals transmitted to or received from the TSV. In some embodiments, the apparatus includes additional circuitry configured to activate, deactivate, adjust at least a portion of the circuitry, or any combination thereof, to alter the propagation delay. In this manner, the apparatus can align internal timings of memory dies of the plurality of memory dies.

Memory with adjustable TSV delay

Memory devices and systems with TSV health monitor circuitry, and associated methods, are disclosed herein. In one embodiment, a memory device includes a plurality of memory dies, a plurality of through-silicon vias (TSVs) in electrical communication with the memory dies; and circuitry. In some embodiments, the circuitry is configured to electrically couple a pair of TSVs of the plurality of TSVs to form a passive circuit. For example, the circuitry can activate a transistor electrically positioned between TSVs of the pair of TSVs to electrically couple the pair of TSVs. In these and other embodiments, the circuitry applies a test voltage to the pair of TSVs using the passive circuit to determine whether a TSV of the pair of TSVs includes degradation.

Memory with TSV health monitor circuitry

Apparatuses and methods for capturing data in a memory are disclosed herein. An apparatus may include a command path and a data capture logic. The command path may be configured to receive a command signal and to delay the command signal with a delay based, at least in part, on a plurality of propagation delays. The data capture logic may be coupled to the command path and configured to receive the delayed command signal and a data strobe signal. The data capture logic may further be configured to capture data according to the data strobe signal responsive, at least in part, to receipt of the delayed command signal.

Apparatuses and methods for capturing data in a memory

A delay locked loop includes a forward path, a feedback path, a phase detector, logic, and a dither circuit. The forward path includes a delay line configured to receive an input clock signal and delay the input clock signal by a time interval to generate an output clock signal. The feedback path is configured to provide a feedback clock signal based on the output clock signal. The phase detector is configured to compare the input clock signal and the feedback clock signal and generate a shift signal if the output clock signal is not in phase with the input clock signal. The logic is coupled to the delay line and configured to receive the shift signal and control the time interval based on the shift signal. The dither circuit is coupled to the delay line and configured to introduce a delay responsive to an assertion of a test mode enable signal.

Method and apparatus for characterizing a delay locked loop

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Boise, ID, United States of America

Michael Roth