International Business Machines Corporation

Michael Romain

Lawrence Alfred Clevenger

Christian Jacobi

Chung-Lung K Shum

Alper Buyuktosunoglu

Anthony Saporito

William Vincent Huott

Adam B Collura

David S Wolpert

Tobias Webel

Michael J Cadigan, Jr

Somnath Ghosh

Stefan Payer

Daniel James Dechene

Pawel Owczarczyk

Sean Michael Carey

Eddy St Juste

Paul Jacob Logsdon

Karl Evan Smock Anderson

Mark Cichanowski

A method can include obtaining characteristic data for a wafer. The characteristic data can correspond to the wafer in a processed state and can include a set of stress values of the wafer. The wafer can include a front side, a back side opposite the front side, and a set of regions. The set of stress values can include a first stress value corresponding to a first region. In the processed state, one or more front-side processes can be completed on the front side of the wafer. The method can include determining that the first stress value exceeds a stress threshold and generating a compensation map. The compensation map can identify one or more regions for forming one or more trenches. The method can include initiating, based on the compensation map, a formation of a first trench on the back side of the wafer in the first region.

Back-side wafer modification

The method and systems described herein provide for identifying and mitigating undesirable power or voltage fluctuations in regions of a semiconductor device. For example, embodiments include detecting a region, such as an individual processor, of a processor chip is exhibiting a reduced power draw and a resulting localized voltage spike (e.g., a spike that exceeds Vmax) that would accelerate overall device end-of-life (EOL). The described systems respond by activating circuits or current generators located in the given region to draw additional power via a protective current. The protective current lowers the local voltages spikes back to within some pre-specified range (e.g., below a Vmax). The resulting reduction in the time above Vmax in testing reduces the number of devices that will need to be discarded due to Vmax violations as well as increases the expected reliability and lifespan of the device in operation.

Method to limit the time a semiconductor device operates above a maximum operating voltage

Aspects of the invention include a method that includes performing timing analysis of an integrated circuit design to identify a critical path. The critical path fails to meet a corresponding timing requirement. The method also includes determining an amount of slack needed by the critical path. The amount of slack is an amount by which the critical path fails to meet the corresponding timing requirement. Downstream slack is created in each path of a next cycle, wherein each path of the next cycle is immediately downstream of the critical path. Slack stealing is performed to improve timing of the critical path based on the downstream slack created in each path of the next cycle.

Downstream slack creation in integrated circuit development

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Michael Romain