Applied Materials, Inc.

Other

Applied Materials Israel Limited

Applied Material, Inc.

Sokudo Co., Ltd.

Applied Materiels, Inc.

Michael Robert Rice

Jeffrey C Hudgens

Robert B Lowrance

Eric Andrew Englhardt

Kenneth S Collins

Martin R Elliott

Douglas Buchberger

Craig A Roderick

David Walter Groechel

Leon Volfovski

Sanjeev Baluja

Sushant Suresh Koshti

Kartik Ramaswamy

Tetsuya Ishikawa

James D Carducci

Dean C Hruzek

Charles T Carlson

William Tyler Weaver

Joseph F AuBuchon

John R Trow

Michael C Kuchar

Jennifer Y Sun

Jay D Pinson, Ii

Vijay D Parkhe

Harald Herchen

Jeffrey S Marks

Gerald Z Yin

David H Quach

Nir Merry

Todd J Egan

Paul Benjamin Reuter

Yue Guo

Vinay K Shah

Brian C Lue

Chan-Lon Yang

Raymond Hoiman Hung

Matthew James Busche

Christopher Dennis Bencher

Kevin P Fairbairn

Kartik Bhupendra Shah

Timothy Weidman

Jared Ahmad Lee

Christopher S Ngai

Shahid Rauf

Hanhong Chen

Yoram Uziel

Ming Xu

Nicolas J Bright

Damon Keith Cox

Swaminathan T Srinivasan

Wendell Glenn Boyd, Jr

Imad Yousif

Claes H Bjorkman

Ala Moradian

Steven E Babayan

Jacob Newman

Rajinder Dhindsa

Klaus Florian Schuegraf

Douglas A Buchberger, Jr

Kallol Bera

Errol Antonio C Sanchez

Guodong Zhan

Seshadri Ramaswami

Mehran Behdjat

James P Cruse

Dmitry A Dzilno

Olivier Luere

Dennis Stanley Grimard

James Matthew Holden

Yogananda Sarode Vishwanath

Robert W Wu

Kalyanjit Ghosh

Srinivas D Nemani

Yang Yang

Ellie Y Yieh

Andrew Nguyen

Juan Carlos Rocha-Alvarez

David K Carlson

Hiroji Hanawa

Joseph Yudovsky

Ananda H Kumar

Shamouil Shamouilian

Pravin K Narwankar

Valentin Nikolov Todorow

Arvind Sundarrajan

Jun Zhao

Mandyam Sriram

Richard Charles Fovell

Ron Naftali

Guan Huei See

Hari K Ponnekanti

Kadthala Ramaya Narendrnath

Ajit Balakrishna

Sriskantharajah Thirunavukarasu

Steven Victor Sansoni

Martin Jeffrey Salinas

Gregory Kirk

Dermot Cantwell

Walter R Merry

Jian Ding

Certain embodiments of the present disclosure relate to methods of forming coated articles. In one embodiment, a method comprises depositing one or more rare earth metal-containing ceramic compounds on an article by atomic layer deposition, for example, to coat surfaces of high aspect ratio internal channels.

Atomic layer deposition coatings for high temperature ceramic components

Mainframe of dual-robot substrate processing system

Embodiments disclosed herein include a plasma treatment chamber, comprising one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow. The first and second gas flows comprise a process gas mixture and/or an independent gas injection (IGI) mixture.

Plasma chamber with multiphase rotating independent gas cross-flow with reduced volume and dual VHF

A method includes performing an atomic layer deposition (ALD) process with respect to a plurality of target elements to coat interiors of the plurality of target elements with a protective coating. Performing the ALD process includes alternating delivery of a first precursor inside the plurality of target elements for a first duration to form an adsorption layer on the interiors of the plurality of target elements, alternating purging of the first precursor from the plurality of target elements for a second duration, and alternating delivery of a second precursor inside the plurality of target elements for a third duration to cause the second precursor to react with the adsorption layer and form a target layer on the interiors of the plurality of target elements.

Parallel atomic layer deposition of target element interiors

Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes: a pedestal having a first side configured to support a substrate and a second side opposite the first side; a plurality of substrate lift pins extending through the pedestal, wherein a plurality of first gaps are disposed between the plurality of substrate lift pins and respective ones of a plurality of substrate lift pin openings in the pedestal; and vacuum lines that extend from the plurality of substrate lift pin openings and that are configured to pump down the plurality of substrate lift pin openings.

Substrate support gap pumping to prevent glow discharge and light-up

Mainframe with integrated lid

Apparatus and methods to process one or more substrates are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition. The support assembly configured to offset the position of the substrate with respect to the processing stations.

Dithering or dynamic offsets for improved uniformity

An electronic device manufacturing system includes a mainframe including a transfer chamber and facets defining side walls of the transfer chamber. The facets include first facet, second facet, third facet, and fourth facet that form the transfer chamber. The first facet has a first number of substrate access ports. The second facet has a second number of substrate access ports. A first substrate access port of the first facet has a first side dimension and a second substrate access port of the second facet has a second side dimension that is different from the first side dimension. The second facet is adjacent to the first facet. The third facet is adjacent to the second facet. The fourth facet has the second number of substrate access ports. The second number of substrate access ports is different than the first number of substrate access ports.

Electronic device manufacturing system

A mainframe of a device fabrication system comprises a base and a plurality of facets on the base. Each facet of the plurality of facets comprises a frame. The mainframe further comprises a plurality of replaceable interface plates. Each replaceable interface plate of the plurality of replaceable interface plates is attached to a respective facet such that at most one replaceable interface plate is attached to each facet. At least one replaceable interface plate comprises one or more access ports. The mainframe further comprises a lid over the plurality of facets. The base, the lid and the plurality of facets with the attached plurality of replaceable interface plates together define an interior volume of the mainframe. The mainframe further comprises a robot arm in the interior volume.

Reconfigurable mainframe with replaceable interface plate

Disclosed herein is a rare-earth oxide coating on a surface of an article with one or more interruption layers to control crystal growth and methods of its formation. The coating may be deposited by atomic layer deposition and/or by chemical vapor deposition. The rare-earth oxides in the coatings disclosed herein may have an atomic crystalline phase that is different from the atomic crystalline phase or the amorphous phase of the one or more interruption layers.

Zone-controlled rare-earth oxide ALD and CVD coatings

Disclosed herein is a substrate support assembly having a ground electrode mesh disposed therein along a side surface of the substrate support assembly. The substrate support assembly has a body. The body has an outer top surface, an outer side surface and an outer bottom surface enclosing an interior of the body. The body has a ground electrode mesh disposed in the interior of the body and adjacent the outer side surface, wherein the ground electrode does not extend through to the outer top surface or the outer side surface.

Ground electrode formed in an electrostatic chuck for a plasma processing chamber

Devices, systems, and methods for integrating load locks into a factory interface footprint space. A factory interface for an electronic device manufacturing system can include an interior volume defined by a bottom, a top and a plurality of sides, a load lock disposed within the interior volume of the factory interface, and a factory interface robot disposed within the interior volume of the factory interface, wherein the factory interface robot is configured to transfer substrates between a set of substrate carriers and the load lock.

Systems and methods for integrating load locks into a factory interface footprint space

A factory interface for an electronic device manufacturing system can include a load lock disposed within the interior volume of a factory interface and a factory interface robot disposed within the interior volume of the factory interface. The factory interface robot can be configured to transfer substrates between a first set of substrate carriers and the first load lock. The factory interface robot can comprise a vertical tower, a plurality of links, and an end effector.

Factory interface robots usable with integrated load locks

A platform is of a side storage pod. The platform includes an upper surface and kinematic pins extending from the upper surface within a chamber of the side storage pod to engage a lower surface of a side storage container in the chamber to level the side storage container in the chamber.

Side storage pods, equipment front end modules, and methods for processing substrates

Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet

Growing community of inventors

Pleasanton, CA, United States of America

Michael Robert Rice