Freescale Semiconductor,inc.

Motorola Corporation

Michael Rendon

Marius K Orlowski

William James Taylor, Jr

Dharmesh Jawarani

Nigel Graeme Cave

Christopher C Hobbs

David Gilmer

John M Grant

Ross Edward Noble

Prasad V Alluri

Iuval R Clejan

In a semiconductor device, a relatively deep germanium implant and activation thereof precedes deposition of the nickel for nickel silicide formation. The activation of the germanium causes the lattice constant in the region of the implant to be increased over the lattice constant of the background substrate, which is preferably silicon. The effect is that the lattice so altered avoids formation of nickel disilicide. The result is that the nickel silicide spiking is avoided.

Semiconductor device with silicided source/drains

An insulating layer () is formed over a stack () of materials and a semiconductor substrate () and an implant is performed through the insulating layer into the semiconductor substrate. In one embodiment, spacers () are formed over the insulating layer (), the insulating layer () is etched, and heavily doped regions () are formed adjacent the spacers. The spacers () are then removed and extension regions () and optional halo regions () are formed by implanting through the insulating layer (). In one embodiment, the insulating layer () is in contact with the semiconductor substrate (). In one embodiment, the stack () is a gate stack including a gate dielectric (), a gate electrode (), and an optional capping layer (). The insulating layer () may include nitrogen, such as silicon nitride and aluminum nitride. In another embodiment, the insulating layer () may be hafnium oxide.

Semiconductor device having an insulating layer and method for forming

Techniques for forming gate dielectric layers ( ) overlying amorphous substrate materials are presented. In addition, techniques for low temperature processing operations that allow for the use of amorphous silicon in doping operations are presented. The amorphous silicon regions ( ) are formed prior to formation of structures included in the gate structure ( ) of the semiconductor device, where the gate structures ( ) are preferably formed using low temperature operations that allow the amorphous silicon regions ( ) to remain in an amorphous state. Source/drain regions ( ) are formed in the amorphous silicon regions ( ), and then the substrate is annealed to recrystallize the amorphous regions.

Method of recrystallizing an amorphous region of a semiconductor

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Austin, TX, United States of America

Michael Rendon