Samsung Sdi Co., Inc.

Samsung Mobile Display Co., Ltd.

Samsung Display Co., Ltd.

Michael Redecker

Joerg Fischer

Arthur Mathea

Marcus Schaedig

Werner Humbs

Jun-Yeob Lee

Albrecht Uhlig

Michael Kubiak

Kerstin Nolte

Thomas Schrader

Markus Schaedig

Young-Sook Choi

An organic-field effect transistor, a method of manufacturing the same, and a flat panel display device including the organic-field effect transistor. The organic-field effect transistor includes an organic semiconductor layer, a gate electrode, and a charge carrier blocking layer. The charge carrier blocking layer is interposed between the gate electrode and the organic semiconductor layer, and it comprises a semiconducting material.

Organic field-effect transistor, flat panel display device including the same, and a method of manufacturing the organic field-effect transistor

A substrate for inkjet printing, which includes a photoresist layer structure on a base substrate, and a method of manufacturing the same are provided. The substrate, which has high surface tension variation and slight thickness variation, may be manufactured at a low cost. The substrate includes a discontinuous organic layer structure made of a fluorinated hydrocarbon or a polysiloxane on the photoresist layer structure.

Substrate for inkjet printing and method of manufacturing the same

A display which does not require color filters, has low optical losses, and is not heavy and large, and a method for displaying an image using the display includes a substrate on one side of which sub-pixels are arranged. Each sub-pixel includes two opposite electrodes and an emitter layer which is interposed between the two electrodes. The emitter layer receives the light projected from an excitation light source, and is able to radiate photoluminescence light. The photoluminescence light from the emitter layer may be controllably quenched by an electrical field formed by the electrodes.

Method for displaying image using display having a photoluminescence quenching device

The present invention provides a display including a substrate and an electrode layer including a plurality of conductors, wherein a silane derivative layer is interposed between the substrate and the electrode layer to increase the bond strength between the substrate and the electrode layer. The invention also provides a method of manufacturing the device.

Display and method for manufacturing the same

A display having a hole barrier layer and/or a electron barrier layer, whereby the hole barrier layer and/or the electron barrier layer are disposed between an emitter layer and a first electrode layer or a second electrode layer of the display. The highest occupied molecule orbital of the hole barrier layer is energetically lower than highest occupied molecule orbital of the emitter layer and/or the lowest unoccupied molecule orbital of the electron barrier layer is energetically higher than the lowest unoccupied molecule orbital of the emitter layer. By arranging the energy levels of the molecule orbitals of the hole barrier layer and/or the electron barrier layer, barriers can be created to prevent the injection of unwanted charge carriers in the reverse direction during re-emissive operation of the display.

Photoluminescence quenching device and display using photoluminescence quenching devices

A chemical compound which has an electron donor group, an electron acceptor group, and a conjugated bridging element bridging between the electron donor group and the electron acceptor group. The chemical compound has a readily displaceable electron, is capable of emitting photoluminescent radiation. A dipole character is present therein only in the excited state of the compound. The compounds are suitable for use in optical devices and, particularly, can be used for photoluminescence quenching devices.

Molecular chemical compounds with structures allowing electron displacement and capable of emitting photoluminescent radiation, and photoluminescence quenching device employing the same

Display using a photoluminescence quenching device, and method for displaying image using the same

Provided are a vertical field-effect transistor, a method of manufacturing the same, and a display device having the same. The method is highly reproducible and can be used to manufacture a vertical organic field-effect transistor at a low cost. In addition, the method does not require photolithography and a shadow mask. In the vertical field-effect transistor, a source electrode is formed on a substrate, and an insulating layer and discontinuous gate electrodes are formed. Then, a charge carrier block layer, an organic semiconductor material, and a drain electrode are formed. The gate electrodes are formed using nanoparticles.

Vertical field-effect transistor, method of manufacturing the same, and display device having the same

The present invention discloses a hole transport layer of an organic EL display, comprising: a material including one of a PEDOT which is a mixture of a poly (3,4)-ethylenedioxythiophene and a polystyrenesulfonate, a PANI which is a mixture of a polyaniline and a polystyrenesulfonate, and an aromatic amine derivative; and an organic compound derivative having the general structure, RRMRR, where 'M' denotes one metal selected from a group consisting of Ti, Pt and one metal among elements belonging to groups 3A and 4A of periods 3 to 5.

Hole transport layer and method for manufacturing the organic EL device by using the same

A circuit for driving a photoluminescence quenching device (PQD) of a flat panel display, each PQD defining a pixel at a crossing of a scan line and a data line, includes an activation transistor and a driver transistor. The activation transistor is turned on according to potential of the scan line and outputs a potential of the data line. The driver transistor is connected between a reference voltage terminal of the circuit and a PQD. When the activation transistor is turned on, the driver transistor applies to the anode of the PQD a potential that is applied to the reference voltage terminal, according to the potential of the data line. In an emissive mode of the PQD, when the driver transistor is turned on, a forward voltage is applied between the anode and the cathode of the PQD so that the PQD emits light. In a re-emissive mode, when the driver transistor is turned off, no voltage is applied between the anode and the cathode of the PQD so that the PQD emits light by photoluminescence.

Circuit for driving matrix display panel with photoluminescence quenching devices, and matrix display apparatus incorporating the circuit

A substrate and an organic electroluminescence device employing the substrate are provided. The substrate has at least one non-continuous photo-resist coating layer formed on at least one surface of a supporting substrate and the non-continuous photo-resist coating has a plurality of continuous portions. The continuous portions may have high surface energy areas and low surface energy areas. A second photo-resist coating layer is used to at least temporarily overlap the continuous portion which corresponds to the high surface energy area in order to form the low surface energy area.

Substrate and organic electroluminescence device using the substrate

A non-volatile memory device and a matrix display panel using the memory device are provided. The non-volatile memory device includes a source, a drain, an active layer, a gate insulating layer, and a gate. The active layer is formed of an organic semiconductor in a contact region between the source and the drain. The gate-insulating layer is formed of a ferroelectric material on the active layer, and the gate is formed on the gate-insulating layer. Accordingly, the non-volatile memory device and the matrix display panel are very flexible, lightweight multi-programmable and can be easily manufactured.

Non-volatile memory device and matrix display panel using the same

A method for electrically addressing fluorescent display element based on polymers and/or low molecular-weight organic materials using a fluorescent quenching effect due to an electric field. The method includes changing positive voltages applied to bright pixels in inverse relation to ambient light intensity, and changing negative voltages applied to dark pixels in direct relation to the ambient light intensity. An organic light-emitting diode display (OLED) mode and a field quenching photoluminescence emission device (FQPED) mode are employed according to the ambient light intensity of the display element.

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Berlin, Germany

Michael Redecker