Infineon Technologies Ag

Michael R&ouml;hner

Walter Hartner

Nicolas Nagel

Rainer Bruchhaus

Gerhard Enders

Thomas Mikolajick

Matthias Kr&ouml;nke

Volker Weinrich

Igor Kasko

A method of fabricating semiconductor memory devices is simplified by providing at least some plug regions, which are provided for contacting storage capacitor devices of a capacitor configuration, such that the plug regions have in each case a region that is elevated above the surface region of a passivation region.

Method for fabricating a semiconductor memory device

To achieve a highest possible integration density in a semiconductor memory device having storage capacitors as storage elements, the method according to the invention forms the capacitor devices in substantially vertically extending fashion, to, as a result, achieve a substantially three-dimensional configuration and an configuration extending into the third dimension for the capacitor devices, a contact connection of the storage capacitors being formed after the production of the storage capacitors.

To manufacture FeRAM memories in a particularly space-saving fashion and, thus, increase the storage density, a manufacturing method forms at least some of the multiplicity of capacitor devices used as storage elements with a multiplicity of individual capacitors that are connected in parallel with one another. The individual capacitors have ferroelectric or paraelectric dielectric regions with different coercitive voltages such that there is a resulting multiplicity of storage states for each of the individual capacitors.

FeRAM memory and method for manufacturing it

Growing community of inventors

München, Germany

Michael Röhner

Growing community of inventors

München, Germany

Michael R&ouml;hner

Michael Röhner