Philips Lumileds Lighting Company LLC

Soraa, Inc.

Lumileds Lighting U.s., LLC

Koninklijke Philips Corporation N.v.

Lumileds LLC

Korrus, Inc.

Ecosense Lighting, Inc.

Soitec

Hewlett-packard Company

Avago Technologies General IP Pte, Ltd.

Coelux S.r.l.

Slt Technologies, Inc.

Other

Agilent Technologies, Inc.

S.o.i.tec Silicon on Insulator Technologies

Michael Ragan Krames

Aurelien J F David

Troy A Trottier

Gerd O Mueller

Frank Michael Steranka

Nathan Fredrick Gardner

John Edward Epler

Regina B Mueller-Mach

Fred A Kish, Jr

Mark Philip D'Evelyn

Michael David Camras

Jonathan J Wierer, Jr

Paul Scott Martin

Rafael Ignacio Aldaz

Daniel Alexander Steigerwald

Arpan Chakraborty

Robert C Taber

Thomas M Katona

Tun Sein Tan

John Julian Uebbing

Christopher Haydn Lowery

Wayne L Snyder

Douglas W Pocius

James W Raring

Peter Josef Schmidt

Yu-Chen Shen

Melvin B McLaurin

Hans-Helmut Bechtel

Gloria E Hofler

Emil Radkov

Willem Smitt

Fabrice Letertre

Mihail Sigalas

Sungsoo Yi

Stephen Andrew Stockman

Joerg Meyer

Frank Tin Chung Shum

Artem Mishin

Michael Joseph Cich

Jonathan J Wierer

R Scott Kern

Christophe A Hurni

William R Imler

Helena Ticha

Ladislav Tichy

Theo Arnold Kop

Linda T Romano

Frank T Shum

Clifford T Jue

Bruce Faure

James Chinmo Kim

Jan De Graaf

Zinovy Dolgonosov

Michael Joseph Ludowise

Franklin J Wall, Jr

Frank Shum

Christopher P Kocot

Gerard Harbers

Oleg Borisovich Shchekin

Tetsuya Takeuchi

Paolo Di Trapani

Werner K Goetz

Derrick S Kamber

Davide Magatti

William David Collins, Iii

Pascal Guenard

Mark A Pugh

Arto V Nurmikko

Godefridus Johannes Verhoeckx

James Gordon Neff

Wenkan Jiang

William D Houck, Ii

Antonio Lotti

Hanmin Zhao

Shih-Yuan Wang

Yong Qin Chen

Scott W Corzine

Nick Holonyak, Jr

Serge J Bierhuizen

Grigoriy Basin

Vinod Khosla

Carlos Mazure

Isamu Akasaki

Stefano Schiaffino

Hiroshi Amano

Akinori Koukitu

Ying-Lan Chang

Norihide Yamada

Christiane Poblenz

Yoshinao Kumagai

Matthijs Hendrik Keuper

Hisashi Murakami

Patrick Nolan Grillot

Yawara Kaneko

Dirk Ehrentraut

Laszlo Takacs

Nicolas J Moll

Serge Laurent Rudaz

Wilfred Martis

Rajeev Tirumala Pakalapati

Methods and apparatus for providing circadian-friendly LED light sources are disclosed. A light source is formed to include a first LED emission (e.g., one or more LEDs emitting a first spectrum) and a second LED emission (e.g., one or more LEDs emitting a second spectrum) wherein the first and second LED emissions are combined in a first ratio and in a second ratio such that while changing from the first ratio to the second ratio the relative circadian stimulation is varied while maintaining a color rendering index above 80.

Circadian-friendly LED light sources

Circadian-friendly LED light source

InAlGaN semiconductor structures having optoelectronic elements characterized by epitaxial layers having different in-plane a-lattice parameters and different InN mole fractions are disclosed. The active regions are configured to emit radiation in different wavelength ranges and are characterized by strain states within about 1% to 2% of compressive strain. The epitaxial layers are grown on patterned InAlGaN seed regions on a single substrate, where the relaxed InGaN growth layers provide (0001) InAlGaN growth surfaces characterized by different in-plane a-lattice parameters and different InN mole fractions. InAlGaN semiconductor structures can be used in optoelectronic devices such as in light sources for illumination and in display applications.

Variable composition ternary compound semiconductor alloys, structures, and devices

An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

System and method for providing color light sources in proximity to predetermined wavelength conversion structures

The invention relates to lighting emitting devices and systems comprising a luminescent composition, said luminescent composition comprising: (i) a first emitting material, said first emitting material having a host lattice doped with EUions; (ii) a second emitting material, said second emitting material having a host lattice doped with Tbions; and (iii) sensitizer material, which sensitizer material is excitable in the violet-to-blue (400 to 480 nm) wavelength range and has an emission spectrum which overlaps at least partly with one or more excitation bands of the first emitting material and with which overlaps at least partly with one or more excitation bands of the second emitting material.

Luminescent composition

The invention relates to a converter system, for instance for a light emitting device, comprising: —a first material, which comprises, preferably essentially consists of an emitting material, emitting a color of interest, and is essentially free of sensitizer material, —a second sensitizer material, which is essentially free of the first material and absorbs light (is excitable) in the wavelength range of interest and its emission spectrum overlaps at least partly with one or more excitation bands of the first material.

Converter system

Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.

Reusable nitride wafer, method of making, and use thereof

LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.

LED lamps with improved quality of light

An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.

System and method for selected pump LEDs with multiple phosphors

The present invention relates to a light emitting device comprising a red-emitting Eumaterial and green emitting Cematerial which are matched so that the resulting white light has an increased lumen equivalent of radiation for a given color rendering index than with the prior art.

The invention relates to a converter system, for instance for a light emitting device, comprising: &#x2014;a first material, which comprises, preferably essentially consists of an emitting material, emitting a color of interest, and is essentially free of sensitizer material, &#x2014;a second sensitizer material, which is essentially free of the first material and absorbs light (is excitable) in the wavelength range of interest and its emission spectrum overlaps at least partly with one or more excitation bands of the first material.

Growing community of inventors

Mountain View, CA, United States of America

Michael Ragan Krames