Agilent Technologies, Inc.

Hewlett-packard Development Company, L.p.

Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies Ecbu IP (singapore) Pte. Ltd.

Avago Technologies Fiber IP (singapore) Pte. Ltd

Avago Technologies Fiber IP Pte Ltd.

Other

Hewlett Packard Enterprise Development LP

Avago Technologies General IP Pte, Ltd.

Michael R T Tan

David P Bour

Scott W Corzine

Ashish Tandon

Ying-Lan Chang

Michael H Leary

Shih-Yuan Wang

Tetsuya Takeuchi

Dubravko I Babic

Albert T Yuen

David A Fattal

Alexandre M Bratkovski

Kostadin Dimitrov Djordjev

Chao-Kun Lin

Richard Stanley Williams

Zhiyong Li

Paul Kessler Rosenberg

Marco Fiorentino

Sagi Varghese Mathai

Wei Guang Wu

Terrel L Morris

Lewis B Aronson

Huei Pei Kuo

Long Yang

Moray McLaren

Jingjing Li

William R Trutna, Jr

Min Hu

William Richard Trutna

Danielle Russell Chamberlin

Fung Suong Ou

Michael Josef Stuke

Dmitri Borisovich Strukov

Russell Dean Dupuis

Kenneth H Hahn

Ying-Ian Chang

Yoon-Kyu Song

Andy Luan

William H Perez

Yin-Lan Chang

Jae Hyun Ryou

Min Soo Noh

Wayne Bi

Tirmula R Ranganath

Georgios Panotopoulos

Yoon K Song

Kostadin D Djordjev

A light emitting diode (or) includes a diode structure containing a quantum well (), an enhancement layer (), and a barrier layer (or) between the enhancement layer () and the quantum well (). The enhancement layer () supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (). The barrier layer serves to block diffusion between the enhancement layer () and the diode structure.

Plasmonic light emitting diode

A device contains a first layer, a second layer; and a membrane between the first and second layers. Mobile ions are in at least one of the first and second layers, and the membrane is permeable to the ions. Interfaces of the conductive membrane with the first layer and the second layer are such that charge of a polarity of the ions collects at the interfaces.

Ionic devices containing a membrane between layers

A system employs a flexible optical media, two connectors, and a mechanism such as a magnet that brings the connector together when the connectors are close to each other. The optical media is able to guide optical signals, and one connector is attached to an end of the optical media. Each connector also has alignment features and provides paths for the optical signals. The alignment features of each connector are shaped to mate with the alignment features of the other connector and to shift the connectors relative to each other as the mechanism pushes the connector together. The alignment features further have seated positions at which the paths in one connector are aligned with the paths in the other connector and separated by a free space gap.

Proximity free space optical interconnect

Systems and methods employ a layer having a pattern that provides multiple discrete guided mode resonances for respective couplings of separated wavelengths into the layer. Further, a structure including features shaped to enhance Raman scattering to produce light of the resonant wavelengths can be employed with the patterned layer.

Grating for multiple discrete wavelengths of Raman scattering

In accordance with an aspect of the invention, a system has a transmitter and a receiver, where the transmitter includes a beam source and an optical element. The beam source produces a beam that represents information, and the optical element alters the beam so that the beam has a uniform intensity over a cross-sectional area. The receiver is separated from the transmitter by free space through which the beam propagates and includes an active area positioned to receive a portion of the beam that the receiver converts into a received signal. To accommodate possible misalignment, the cross-sectional area of the beam is larger than the active area by an amount that accommodates a range of misalignment of the receiver with the transmitter.

Misalignment tolerant free space optical transceiver

A light-emitting device that includes an LED and a light extraction layer and the method for making the same are disclosed. The LED includes a substrate on which an active layer is sandwiched between a p-type layer and an n-type layer, the active layer generating light in a band of wavelengths about a central wavelength when holes and electrons recombine therein. The n-type layer, active layer, and p-type layer are formed on the substrate. First and second electrodes for providing a potential difference between the p-type layer and the n-type layer are included in the LED. The light extraction layer includes a clear layer of material having a first surface in contact with a surface of the LED and a second surface having light scattering features with dimensions greater than 0.5 times the central wavelength. The material of the clear layer can be polycrystalline or amorphous.

Surface textured LEDs and method for making the same

In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.

Active region of a light emitting device optimized for increased modulation speed operation

Vehicle-based lidar systems and methods are disclosed using multiple lasers to provide more compact and cost-effective lidar functionality. Each laser in an array of lasers can be sequentially activated so that a corresponding optical element mounted with respect to the array of lasers produces respective interrogation beams in substantially different directions. Light from these beams is reflected by objects in a vehicle's environment, and detected so as to provide information about the objects to vehicle operators and/or passengers.

Vertical cavity surface emitting laser (VCSEL) array laser scanner

The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.

Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth

Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.

Deep quantum well electro-absorption modulator

A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced at the light generation layer is more efficiently dissipated due to the presence of the HTC layer. Alternatively, a light generating device such as a VCSEL includes a light generation layer, a top reflector, and a high thermal conductivity (HTC) bottom reflector. Heat produced at the light generation layer is more efficiently dissipated due to the fact that the bottom reflector is a HTC DBR reflector having lower thermal resistivity than a conventional DBR reflector.

High thermal conductivity vertical cavity surface emitting laser (VCSEL)

Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.

Method and structure for deep well structures for long wavelength active regions

An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.

Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same

The method comprises forming barrier layers of AlGaAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.

Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof

An optical isolator for coupling light from a first waveguide to a second waveguide is disclosed. The optical isolator utilizes a resonator coupled to the first and second optical waveguides. The resonator has a resonance at &#x3bb; for light traveling from the first optical waveguide to the second optical waveguide; however, the resonator does not have a resonance at &#x3bb; for light traveling from the second waveguide to the first waveguide. The resonator can use a layer of ferromagnetic material in an applied magnetic field. The magnetic field within the ferromagnetic material varies in strength and/or direction over the layer of ferromagnetic material. The magnetic field can be generated by an external magnetic field that varies over the layer of ferromagnetic material. Alternatively, the resonator can include a layer of ferromagnetic metal that overlies a portion of the layer of ferromagnetic material and a constant external magnetic field.

Optical isolator utilizing a micro-resonator

Growing community of inventors

Menlo Park, CA, United States of America

Michael R T Tan