Rockwell International Corporation

Michael R Splinter

Addison B Jones

Michael T Elliott

John P Reekstin, Jr

Moiz M Beguwala

Richard F Palys

Briefly, and in general terms, the present invention provides a process for fabricating a semiconductor device, the device includes a semiconductor substrate having a major surface including an ion implanting region, wherein one fabrication step in the process subsequent to the formation of the ion implantation region is to direct a beam of microwave radiation at the device for annealing the ion implanted regions.

Low temperature microwave annealing of semiconductor devices

Semiconductor devices with gate dimensions as small as 0.25 microns square have been fabricated using electron beam lithography and dry processing techniques. In particular, silicon gate, N-channel, metal-oxide-semiconductor (NMOS) field-effect-transistors (FET) have been produced. The devices and the process are especially adapted to bulk silicon based transistors.

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Silverado, CA, United States of America

Michael R Splinter