Honeywell International Inc.

Michael R Pinter

Jianxing Li

Nancy F Dean

Charles Smith

Stephane Ferrasse

Susan D Strothers

Frank C Alford

Janine K Kardokus

Jaeyeon Kim

William B Willett

Amy Gettings

Patrick K Underwood

Roger Alan Emigh

Brett M Clark

Vikki L Johnson

Steven Wu

Timothy Knowles

Michael D Payton

Christopher L Seaman

Werner Hort

Ira G Nolander

Wuwen Yi

Mani Ahmadi

Brett M Ellman

Steven (Chi Tse) Wu

Ravi Rastogi

Jared Akins

Patrick Underwood

In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.

Chalcogenide sputtering target and method of making the same

A method of forming a high strength aluminum alloy. The method comprises heating an aluminum material including scandium to a solutionizing temperature of the aluminum material such that scandium is dispersed throughout the aluminum material to form an aluminum alloy. The method further comprises extruding the aluminum alloy with equal channel angular extrusion to form a high strength aluminum alloy, such that the high strength aluminum alloy has a yield strength greater than about 40 ksi after being at a temperature from about 300&#xb0; C. to about 400&#xb0; C. for at least one hour.

High strength aluminum alloy backing plate and methods of making

A method of forming a high strength copper alloy. The method comprises heating a copper material including from about 2 wt. % to about 20 wt. % manganese by weight of the copper material to a temperature above 400&#xb0; C., allowing the copper material to cool to a temperature from about 325&#xb0; C. to about 350&#xb0; C. to form a cooled copper material, and extruding the cooled copper material with equal channel angular extrusion to form a cooled copper manganese alloy.

Copper manganese sputtering target

A solder wire composition may include 85 to 95 weight percent bismuth, and at least 5 weight percent copper. The solder wire composition may have a diameter of less than about 1 millimeter, and an elongation at break of at least 20%.

Lead-free solder compositions

Sputtering targets having a reduced burn-in time are disclosed that comprise: a) a heat-modified surface material having a substantially uniform crystallographic orientation, wherein at least part of the surface material was melted during heat-treatment, and b) a core material having an average grain size. Sputtering targets are also disclosed that include a heat-modified surface material having network of shallow trenches, alternating rounded peaks and valleys in the surface of the target or a combination thereof, wherein at least part of the surface material was melted during heat-treatment, and a core material having an average grain size. Methods of producing sputtering targets having reduced burn-in times comprises: a) providing a sputtering target comprising a sputtering surface having a sputter material and a crystal lattice, and b) heat-modifying the sputtering surface in order to melt at least part of the surface material and modify the crystal lattice. Methods of producing a sputtering target having a reduced burn-in time are also disclosed comprising: providing a sputtering target having a sputtering surface, wherein the sputtering surface comprises a damage layer, and modifying the sputtering surface by deplating a layer of material, pulsed-plating a layer of material or a combination thereof.

Manufacturing design and processing methods and apparatus for sputtering targets

The invention includes container-shaped physical vapor deposition targets having a first conductive material in a container-shape and a second conductive material on an entirety of an exterior surface of the first conductive material. The second conductive material has a different composition than the first conductive material.

Container-shaped physical vapor deposition targets

Described is a fibrous thermal interface. The interface comprises flocked thermally conductive fibers embedded in an adhesive in substantially vertical orientation with portions of the fibers extending out of the adhesive. An encapsulant fills spaces between the portions of the fibers that extend out of the adhesive and beneath the free tips of the fibers.

Compliant fibrous thermal interface

Described is a transferrable fibrous thermal interface. The interface comprises flocked thermally conductive fibers embedded in an adhesive in substantially vertical orientation with portions of the fibers extending out of the adhesive. An encapsulant fills spaces between the portions of the fibers that extend out of the adhesive and a release liner is on at least one outer surface of the interface.

Transferrable compliant fibrous thermal interface

Growing community of inventors

Spokane, WA, United States of America

Michael R Pinter