Seagate Technology Incorporated

Michael R Montemorra

Shaoping Li

Xiong Liu

Kaizhong Gao

Song Sheng Xue

Mourad Benakli

Nurul Amin

Patrick Joseph Ryan

Kirill A Rivkin

Todd Michael Lammers

Quan Li

Ralph William Cross

Beng Theam Ko

Daniel John Brown

Method and apparatus for enhancing write current switching efficiencies during data write operations in a data storage device. In some embodiments, write data are described in the form a sequence of symbols of nT length where T is a channel clock rate and n is an integer over a selected range. Bi-directional write currents are applied to a write element to record the sequence of symbols to a storage medium. The write currents are switched between a first rail current and a second rail current for alternating symbols. The write currents are further transitioned to an intermediate current value for at least one channel clock period immediately preceding a next occurrence of a symbol boundary between an adjacent pair of symbols in the sequence.

Write current switching in a data storage device

The present invention includes a data storage system. The data storage system includes an enclosure and at least one perpendicular recording device positioned within the enclosure and in communication with a recording medium. The recording medium includes a layer of magnetic material that has a permeability that is substantially similar to a permeability of a magnetic material in the recording device. The data storage system also includes a soft magnetic material included in the enclosure for shielding magnetic stray fields from the perpendicular recording device. The soft magnetic material has a permeability that is at least as great as approximately the permeability of the layer of magnetic material of the recording medium.

Shielded enclosure of a disc drive for reducing penetration and influence of stray fields

A magnetic sensor is provided. The magnetic sensor includes a magnetoresistive multi-layered portion that has a first resistance region and a second resistance region. At least two contacts are coupled to the magnetoresistive multi-layered portion. A sensing current flows from a first contact of the at least two contacts to a second contact of the at least two contacts via the first resistance region and the second resistance region of the magnetoresistive multi-layered portion. The first resistance region promotes a primary flow of the sensing current in a first direction substantially perpendicular to surface planes of the layers of the magnetoresistive multi-layered portion, and the second resistance region promotes the primary flow of the sensing current in a second direction substantially in parallel to surface planes of the layers of the magnetoresistive multi-layered portion.

Magnetic sensor that combines both CPP and CIP modes of operation

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Longmont, CO, United States of America

Michael R Montemorra