Amcol International Corporation

Michael R Ianiro

Mingming Fang

Don D Eisenhour

Compositions and methods for planarizing or polishing a surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) purified clay; and optional additives, such as (c) a chemical accelerator; and (d) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the metal and/or insulating material removed during the polishing process. The complexing or coupling agent carries away the removed metal and/or silicon dioxide insulator particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing a surface comprising contacting the surface with the compositions.

Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces

Compositions and methods for planarizing or polishing a corundum, GaAs, GaP or GaAs/GaP alloy surface, particularly a semiconductor wafer surface. The polishing compositions described herein comprise (a) a liquid carrier; (b) a smectite clay, preferably a sodium smectite clay; and optional additives, such as (c) CeO, SiOand/or AlOabrasive particles, (d) a chemical accelerator; and (e) a complexing or coupling agent capable of chemically or ionically complexing with, or coupling to, the material removed during the polishing process. The optional complexing or coupling agent carries away the removed particles, during polishing, to prevent the separated particles from returning to the surface from which they were removed. Also disclosed are methods of planarizing or polishing corundum, GaAs, GaP and GaAs/GaP alloy surfaces comprising contacting the surface with the compositions.

Method chemical-mechanical polishing and planarizing corundum, GaAs, GaP and GaAs/GaP alloy surfaces

A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeOparticles, based on the total weight of solids in the composition, said clay and CeOabrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 &#x3bc;m.

[object Object]

A chemical-mechanical abrasive composition for use in semiconductor processing uses abrasive particles having a non-spherical morphology.

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Macon, GA, United States of America

Michael R Ianiro