Hitachi Global Storage Technologies Netherlands B.v.

Seagate Technology Incorporated

Hgst Netherlands, B.v.

Seagate Technologies, Inc.

Michael R Feldbaum

David S Kuo

Kim Yang Lee

Aron Pentek

Gennady G Gauzner

Koichi R Wago

Amanda Baer

Donald Giles Allen

Quang Le

Ming Jiang

Li-Ping Wang

Hung-Chin Guthrie

Richard Jule Contreras

Justin Jia-Jen Hwu

Mustafa Pinarbasi

Vladimir Nikitin

Wen-Chien David Hsiao

Neil Leslie Robertson

Murali Ramasubramanian

Wipul Jayasekara

Sue Siyang Zhang

Xiaomin Yang

ShuaiGang Xiao

Hamid Balamane

Yautzong Hsu

Katalin Pentek

Yi Zheng

Yimin Hsu

Henry Hung Yang

Howard Gordon Zolla

Edward Kihyen Lee

Bin Lu

Zhaoning Yu

Yinshi Liu

Rene Johannes Marinus Van De Veerdonk

John I Kim

HongYing Wang

Wei Hu

Aaron Neuhaus

Dominic Frank Truchetta

Charles G Seegel, Iii

A DNA sequencing device and methods of making. The device includes a pair of electrodes having a spacing of no greater than about 2 nm, the electrodes being exposed within a nanopore to measure a DNA strand passing through the nanopore. The device can be made by depositing a conductive layer over a sacrificial channel and then removing the sacrificial channel to form the electrode gap.

Vertical nanopore coupled with a pair of transverse electrodes having a uniform ultrasmall nanogap for DNA sequencing

The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.

Method of patterning a stack

Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.

Apparatuses and methods utilizing etch stop layers

Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.

Block copolymer self-assembly for pattern density multiplication and rectification

The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.

Method of stack patterning using a ion etching

Provided herein is a method including oxidizing tops of features of a patterned magnetic layer to form oxidized tops of the features; removing an excess of an applied first protective material down to at least the oxidized tops of the features to form a planarized layer; and applying a second protective material over the planarized layer.

Apparatuses and methods including magnetic layer oxidation

Provided herein is a method including conformally depositing a first layer over a patterned resist; depositing a second, thicker layer over the first layer; etching the second layer to expose the first layer; and patterning a magnetic layer by ion implantation in accordance with the patterned resist to form a patterned magnet layer.

Magnetic layer patterning by ion implantation

A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.

Method to control mask profile for read sensor definition

A magnetic head having non-GMR shunt for perpendicular recording and method for making magnetic head having non-GMR shunt for perpendicular recording is disclosed. A shunt is provided for shunting charge from a read sensor. The shunt is formed co-planar with the read sensor and is fabricated using non-GMR materials.

Method for making a magnetic head having a non-GMR shunt

A perpendicular magnetic recording write head has a write pole, a trapezoidal-shaped trailing shield notch, and a metal gap layer between the write pole and notch. The write pole has a trailing edge that has a width substantially defining the track width and that faces the front edge of the notch but is spaced from it by the gap layer. The write head is fabricated by reactive ion beam etching of a thin mask film above the write pole to remove the mask film and widen the opening at the edges of the write pole. The gap layer and notch are deposited into the widened opening above the write pole. The write pole has nonmagnetic filler material, such as alumina, surrounding it except at its trailing edge, where it is in contact with the gap layer, which is formed of a different material than the surrounding filler material.

Method of manufacturing a perpendicular magnetic recording write head with notched trailing shield

A perpendicular write head includes a beveled main pole having corners defining a track width and having a planarized surface and encapsulated on either side thereof and below by an alumina layer, the alumina layer having a polished surface and extending above the main pole on either side thereof as steps.

Method to planarize perpendicular write poles using a combination of CMP and reactive ion milling

A magnetic write head for perpendicular magnetic recording that has a write pole and a trailing or side shield that has a leading edge that extends to or beyond the leading edge of write pole, thereby ensuring complete side magnetic shielding. The write head can be formed by forming the write pole on a non-magnetic substrate that is constructed of a material that can be readily removed by reactive ion etching (RIE). The write pole can be formed by depositing a layer of magnetic write pole material over the substrate and then forming a mask over the magnetic write pole material. An ion mill can be performed to define the write pole, and then a reactive ion etch can be performed to notch the substrate, so that when a non-magnetic shield gap material is deposited it will be below or at the bottom of the write pole. Then a magnetic shield material can be deposited to form a shield having a leading edge that extends beyond the leading edge of the write pole.

Magnetic write head having a shield that extends below the leading edge of the write pole

Growing community of inventors

San Jose, CA, United States of America

Michael R Feldbaum