General Scanning, Inc.

Gsi Group Corporation

Other

Michael Plotkin

James J Cordingley

Donald Victor Smart

William Lauer

Jonathan S Ehrmann

Bradley L Hunter

Pierre C Trepagnier

Steven P Cahill

Donald J Svetkoff

Shepard D Johnson

Joohan Lee

Joseph J Griffiths

Dimitry Maltsev

John Keefe

A method makes a discrete adjustment to static alignment of a laser beam in a machine for selectively irradiating conductive links on or within a semiconductor substrate using the laser beam. The laser beam propagates along a beam path having an axis extending from a laser to a laser beam spot at a location on or within the semiconductor substrate. The method generates, based on at least one measured characteristic of the laser beam, at least one signal to control an adjustable optical element of the machine affecting the laser beam path. The method also sends said at least one signal to the adjustable optical element. The method then adjusts the adjustable optical element in response to said at least one signal so as to improve static alignment of the laser beam path axis.

System and method for automatic laser beam alignment

Laser pulses are selected from a group of closely spaced laser pulses with an optical modulator by adjusting pulse timing relative to an impingement interval. An adjusted pulse is moved from an impingement interval to a non-impingement interval and is blocked. The blocked laser source is stabilized by running nearly continuously. Pulse selection with multiple laser sources is achieved with a single acousto-optic modulator.

System and method for multi-pulse laser processing

The present invention relates to the field of laser processing methods and systems, and specifically, to laser processing methods and systems for laser processing multi-material devices. Systems and methods may utilize high speed deflectors to improve processing energy window and/or improve processing speed. In some embodiments, a deflector is used for non-orthogonal scanning of beam spots. In some embodiment, a deflector is used to implement non-synchronous processing of target structures.

Link processing with high speed beam deflection

A high-speed method and system for precisely positioning a waist of a material-processing laser beam to dynamically compensate for local variations in height of microstructures located on a plurality of objects spaced apart within a laser-processing site are provided. In the preferred embodiment, the microstructures are a plurality of conductive lines formed on a plurality of memory dice of a semiconductor wafer. The system includes a focusing lens subsystem for focusing a laser beam along an optical axis substantially orthogonal to a plane, an x-y stage for moving the wafer in the plane, and a first air bearing sled for moving the focusing lens subsystem along the optical axis.

Method and system for precisely positioning a waist of a material-processing laser beam to process microstructures within a laser-processing site

A laser polarization control apparatus includes a polarization modifying device, such as a liquid crystal variable retarder, and a controller. The polarization modifying device receives a laser beam and modifies the polarization of the laser beam. The controller, which is connected to the polarization modifying device, adjusts an input to the polarization modifying device in order to control modification of the polarization of the laser beam based on alignment of a structure to be processed by the laser beam. For example, the polarization of the laser beam may be rotated to correspond with the alignment of a link in a semiconductor device to be cut by the laser beam. The polarization modifying device is configured for incorporation into a laser processing system that produces the laser beam received by the polarization modifying device and that focuses the laser beam modified by the polarization modifying device onto a workpiece that includes the structure to be processed by the laser beam. An analyzer tool receives the laser beam modified by the polarization modification device and measures the modification of the polarization of the laser beam by the polarization modification device.

Controlling laser polarization

The invention provides a system and method for vaporizing a target structure on a substrate. According to the invention, a calculation is performed, as a function of wavelength, of an incident beam energy necessary to deposit unit energy in the target structure. Then, for the incident beam energy, the energy expected to be deposited in the substrate as a function of wavelength is calculated. A wavelength is identified that corresponds to a relatively low value of the energy expected to be deposited in the substrate, the low value being substantially less than a value of the energy expected to be deposited in the substrate at a higher wavelength. A laser system is provided configured to produce a laser output at the wavelength corresponding to the relatively low value of the energy expected to be deposited in the substrate. The laser output is directed at the target structure on the substrate at the wavelength corresponding to the relatively low value of the energy expected to be deposited in the substrate, in order to vaporize the target structure.

Laser processing

A high-speed method and system for precisely positioning a waist of a material-processing laser beam to dynamically compensate for local variations in height of microstructures located on a plurality of objects spaced apart within a laser-processing site are provided. In the preferred embodiment, the microstructures are a plurality of conductive lines formed on a plurality of memory dice of a semiconductor wafer. The system includes a focusing lens subsystem for focusing a laser beam along an optical axis substantially orthogonal to a plane, an x-y stage for moving the wafer in the plane, and a first air bearing sled for moving the focusing lens subsystem along the optical axis. The reference data is generated by the system which includes a modulator for reducing power of the material-processing laser beam to obtain a probe laser beam to measure height of the semiconductor wafer at a plurality of locations about the site to obtain reference height data. A computer computes a reference surface based on the reference height data. A trajectory planner generates trajectories for the wafer and the waist of the laser beam based on the reference surface.

A laser polarization control apparatus includes a polarization modifying device and a controller. The polarization modifying device receives a laser beam and modifies the polarization of the laser beam. The controller adjusts an input to the polarization modifying device in order to control modification of the polarization of the laser beam based on alignment of a structure to be processed by the laser beam. The polarization modifying device is configured for incorporation into a laser processing system that produces the laser beam received by the polarization modifying device and that focuses the laser beam modified by the polarization modifying device onto a workpiece that includes the structure to be processed by the laser beam. An analyzer tool receives the laser beam modified by the polarization modification device and measures the modification of the polarization of the laser beam by the polarization modification device. A plurality of inputs are applied to the polarization modifying device to control modification of the polarization of the laser beam, and the laser beam modified by the polarization modification device is analyzed using the analyzer tool in order to measure modification of the polarization of the laser beam by the polarization modification device. The relationship between the inputs to the polarization control device and the modification of the polarization of the laser beam is stored.

Growing community of inventors

Newton, MA, United States of America

Michael Plotkin