First Sensor Ag

Institut Fuer Halbleiterphysik Frankfurt (oder) Gmbh

Pierschel, Michael

Michael Pierschel

Marc Schillgalies

Martin Wilke

Frank Kudella

Hans Gustat

Iman Sabri Alirezaei

Ruben Chavez

A photosensitive element includes a semiconductor substrate, a light sensitive region formed in the semiconductor substrate, an inactive region at least partly surrounding the light sensitive region, and a protective layer having an opening leaving the light sensitive region uncovered by the protective layer. The protective layer is an anti-reflective coating having in at least a part of a spectral range between 300 nm and 1200 nm a reflectivity of less than 10% and a transmittance of less than 0.1%.

Photosensitive element and optoelectronic component

Provided is an arrangement for a semiconductor-based pressure sensor chip including: piezoresistive elements which are formed having an electrically doped channel in a layer arrangement in the region of a pressure membrane of a semiconductor substrate; an electrically conductive cover layer which is formed in the layer arrangement and is electrically insulated from the piezoresistive elements by an insulating layer; a bridge circuit of transistors, each of which are formed having one of the piezoresistive elements, wherein gate electrodes of the transistors are arranged in electrically doped layer regions in the electrically conductive cover layer, said layer regions being formed separately from one another; and a signal feedback, using which an output signal applied to the output of the bridge circuit is fed back in a signal-amplifying manner to one or more of the gate electrodes. Also provided is a pressure sensor chip.

Arrangement for a semiconductor-based pressure sensor chip and pressure sensor chip having a bridge circuit of transistors

A semiconductor structure for a radiation detector, comprising a substrate composed of a semiconductor material of a first conductivity type, a semiconductor substrate, wherein the semiconductor substrate is provided with a semiconductor layer provided on the substrate and having a higher resistance in comparison to the substrate, of the first conductivity type, and electrically doped with a doping concentration, a plurality of doped regions, wherein the plurality of doped regions are provided in the semiconductor substrate and separated from each other, of a second conductivity type that is opposite from the first conductivity type, and electrically doped with a doping concentration that is higher than the doping concentration in the semiconductor substrate, at least one further doping region, and a cover layer is provided.

Semiconductor structure for a radiation detector and a radiation detector

Semiconductor photodetectors are provided that may enable optimized usage of an active detector array. The semiconductor photodetectors may have a structure that can be produced and/or configured as simply as possible. A radiation detector system is also provided.

Semiconductor photodetector and radiation detector system

The invention is a static frequency divider with a divider ratio which can be switched over, tor use in the extremely high frequency range. In a preferred embodiment, the invention is a static frequency divider with a divider ratio which can be switched over, which includes first and second divider D- type flip-flops which each have two inputs which can be alternately activated by way of control inputs, in order to prevent the occurrence of metastable conditions. This is accomplished by connecting the successive synchronous D-type flip-flops upstream of the two divider D-type flip- flops and the control inputs of the first and second divider D-type flip-flops are connected to separate change-over switching devices.

Growing community of inventors

Berlin, Germany

Michael Pierschel