Micron Technology Incorporated

Michael P O'Toole

Koushik Banerjee

Jason R Johnson

Robert Douglas Cassel

William L Cooper

Jian Jiao

Isaiah O Gyan

Methods, systems, and devices supporting configurable resistivities for lines in a memory device, such as access lines in a memory array are described. For example, metal lines at different levels of a memory device may be oxidized to different extents in order for the lines at different levels of the memory device to have different resistivities. This may allow the resistivity of lines to be tuned on a level-by-level basis without altering the fabrication techniques and related parameters used to initially form the lines at the different levels, which may have benefits related to at least reduced cost and complexity. Lines may be oxidized to a controlled extent using either a dry or wet process.

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Salt Lake City, UT, United States of America

Michael P O'Toole