Prysm, Inc.

International Business Machines Corporation

Michael P McMahon

Philip J Ralli

Robert L Graves

Zhong-Xiang He

Cuc Kim Huynh

Thai Doan

Gary Joseph Beardsley

Zhong X He

A display screen includes a filter layer, a fluorescent layer having parallel fluorescent stripes, and an attachment layer between an excitation side of the fluorescent layer and a first side of the filter layer to attach the excitation side of fluorescent layer to the filter layer while providing vertical separation therebetween. The attachment layer includes attachment regions that are separated from each other by lateral spacings such that excitation-side air gaps are formed between areas of the fluorescent layer and the filter layer that correspond to the lateral spacings. During display operation, excitation light received on a second side of the filter layer propagates through to the first side of the filter layer, and at least a portion of the excitation light that propagates from the second side of the filter layer travels through the excitation-side air gaps to excite the fluorescent stripes.

Multilayered screens for scanning beam display systems

A method of forming a recessed polysilicon contact is provided. The method includes: forming a trench in a substrate; overfilling the trench with polysilicon; removing the polysilicon outside of the trench to provide a substantially planar surface; oxidizing the surface of the polysilicon in the trench using plasma oxidation; and removing an upper portion of the polysilicon from the trench.

Method of forming a recessed polysilicon filled trench

In a fabrication process, photoresist is disposed over a semiconductor substrate ( ), covering a front surface ( ) of the substrate ( ) and filling trenches ( ) therein. The photoresist is planarized in chemical mechanical polishing to achieve a uniform thickness throughout the substrate ( ). An anisotropic etching process partially removes the photoresist in the trenches ( ), thereby creating recesses in the trenches ( ). Because the thickness of the photoresist is uniform throughout the substrate ( ) before the etching process, the depths of the recesses in different trenches ( ) are substantially equal to each other. A uniform recess depth throughout the substrate ( ) is thereby achieved. The uniform recess depth facilitates in ensuring the semiconductor devices fabricated on the substrate ( ) to have consistent parameters, characteristics, and performances.

Method for homogenizing device parameters through photoresist planarization

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Holden, MA, United States of America

Michael P McMahon