Cree Gmbh

Michael P Laughner

Jeffrey Carl Britt

Peter Scott Andrews

David T Emerson

Raymond Rosado

Mrinal Kanti Das

Brandon Stanton

Amber Christine Abare

Nicholas William Medendorp, Jr

Ban Poh Loh

Robert Tyler Leonard

Adrian Powell

Ronan Letoquin

Craig William Hardin

Davis Andrew McClure

Yankun Fu

William H Brixius

Multiple configuration light emitting diode (LED) devices and methods are disclosed wherein LEDs within the device can be selectively configured for use in higher voltage, or variable voltage, applications. Variable arrangements of LEDs can be configured. Arrangements can include one or more LEDs connected in series, parallel, and/or a combination thereof. A surface over which one or more LEDs may be mounted can comprise one or more electrically and/or thermally isolated portions.

Multiple configuration light emitting devices and methods

Solid state (e.g., LED) lighting devices include multiple emitters mounted on or over a substrate comprising insulating material with conductive traces thereon, with various emitters being independently controllable with multiple pairs of anodes and cathodes that may be arranged on an opposite surface of the substrate than the emitters. Electrically conductive vias may be defined through the insulating substrate, and a molded lens may be provided over the substrate and emitters mounted thereon. Various combinations of independently controllable emitters or emitter groups may be provided, for example, a red emitter in combination with multiple blue shifted yellow (BSY) emitters, or separately controllable red, green, blue, and white (e.g., BSY) emitters.

Light emitting devices including multiple anodes and cathodes

Methods of forming silicon carbide power devices are provided. An nsilicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the nsilicon carbide layer. A buried region of psilicon carbide is provided on the p-type silicon carbide well region. An nregion of silicon carbide is provided on the buried region of psilicon carbide. A channel region of the power device is adjacent the buried region of psilicon carbide and the nregion of silicon carbide. An nregion is provided on the channel region and a portion of the nregion is removed from the channel region so that a portion of the nregion remains on the channel region to provide a reduction in a surface roughness of the channel region.

Silicon carbide devices having smooth channels

High density multi-chip LED devices are described. Embodiments of the present invention provide high-density, multi-chip LED devices with relatively high efficiency and light output in a compact size. An LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The LED chips may be arranged in two groups, wherein the LED chips within each group are connected in parallel and the groups are connected in series. In some embodiments, the LED device includes a submount, which may be made of ceramic. The submount may include a connection bus and semicircular areas to which chips are bonded. Wire bonds can be connected to the LED chips so that all the wire bonds are disposed on the outside of a group of LED chips to minimize light absorption.

High density multi-chip LED devices

Methods of fabricating silicon carbide devices having smooth channels

Light emitting diode (LED) package with multiple anodes and cathodes

Light emitting diode (LED) package

Multi-chip LED devices are described. Embodiments of the present invention provide multi-chip LED devices with relatively high efficiency and good color rendering. The LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The optical element may be molded from silicone. The LED chips may be connected in parallel. In some embodiments, the LED device includes a submount, which may be made of a ceramic material such as alumina or aluminum nitride. Wire bonds can be connected to the LED chips so that all the wire bonds tend the outside of a group of LED chips. Various sizes and types of LED chips may be used, including vertical LED chips and sideview LED chips.

Multi-chip LED devices

Power devices are provided including a p-type conductivity well region and a buried pconductivity region in the p-type conductivity well region. An nconductivity region is provided on the buried pconductivity region. A channel region of the power device is provided adjacent the buried pconductivity region and nconductivity region, the channel region of the power device having a root mean square (RMS) surface roughness of less than about 1.0 &#x212b;.

Emitter package

High-density emitter package

Multiple configuration light emitting device package

Methods for fabricating LED packages comprising providing an LED chip and covering at least part of it with a liquid medium. An optical element is provided and placed on the liquid medium. The optical element is allowed to settle to a desired level and the liquid medium is cured. LED packages are also disclosed that are fabricated using the disclosed methods.

Method of uniform phosphor chip coating and LED package fabricated using method

Growing community of inventors

Cary, NC, United States of America

Michael P Laughner