Motorola Corporation

Michael P LaMacchia

William Oliver Mathes

Bruce A Bernhardt

Bruce Alan Fette

Jonathan K Abrokwah

Corey D Overgaard

Anthony J McAuley

Brian Bowers

Chuckwudi Perry

Robert Alan Kempke

Bobby Glen Barker

A method of evaluating a cryptosystem to determine whether the cryptosystem can withstand a fault analysis attack, the method includes the steps of providing a cryptosystem having an encrypting process to encrypt a plaintext into a ciphertext, introducing a fault into the encrypting process to generate a ciphertext with faults, and comparing the ciphertext with the ciphertext with faults in an attempt to recover a key of the cryptosystem.

Differential fault analysis hardening apparatus and evaluation method

A single event upset (SEU) sensitivity control system (42) dynamically hardens a digital circuit (48) to single event upsets. The sensitivity control system (42) includes an upset rate sensor (66) for detecting a quantity of particles (38) that cause single event upsets. A noise margin control circuit (70) is configured to adjust a noise margin (46) of the digital circuit (48) in response to the quantity of particles (38). Noise margin (46) is increased when a particle density (34) is high to decrease the sensitivity of the digital circuit (48) to single event upsets. Additionally, noise margin (46) is decreased when a particle density (36) is low to decrease the power consumption level of digital circuit (48).

Apparatus and method for dynamic hardening of a digital circuit

A method of fabricating submicron HFETs includes forming a buffered substrate structure with a supporting substrate of GaAs, a portion of low temperature AlGaAs grown on the supporting substrate at a temperature of approximately 300.degree. C., a layer of low temperature GaAs grown on the portion AlGaAs layer at a temperature of 200.degree. C., a layer of low temperature AlGaAs grown on the GaAs layer at a temperature of 400.degree. C., and a buffer layer of undoped GaAs grown on the second AlGaAs layer. Complementary pairs of HFETs can be formed on the buffered substrate structure, since the structure supports the operation of p and n type transistors equally well.

Method of fabricating submicron FETs with low temperature group III-V

A system for a pipeline cascaded content addressable memory CAM system for sequentially processing input data includes an input register, a CAM core, cascade logic and an output register. As the memory association functions produce matches in the CAM core, the cascade logic in parallel composites data associated with each matching CAM core. Each cascade processes a separate data input simultaneously then passes on the cumulative results to the next stage.

Cascadable content addressable memory and system

A method and apparatus for hardening current steering logic (CSL) to soft errors (charged particles passing through and upsetting the logic state of an integrated circuit) includes a hardened CSL circuit or cell (20), including three or more circuit cell elements (21) in parallel. The circuit cell elements (21) redundantly perform a single cell function. Each of the circuit cell elements (21) is coupled to soft error immune resistive elements (24 and 25) within a summing element (22). Current (23) is steered through the resistive elements (24 and 25) depending upon input signals (26) to each of the circuit cell elements (21). The logical output signal (27) is unaffected by a single soft error event since the majority of the total current (23) remains steered through the correct resistive element (24 or 25).

Method and apparatus for hardening current steering logic to soft errors

A digital clock generator circuit which accepts a rate signal and a master clock signal and generates an output clock signal exhibiting a frequency which is programmed by the rate signal is disclosed. A constant duty cycle characteristic of the output clock signal is obtained regardless of the output clock signal's frequency. A memory element which generates the output signal is placed in one logical state when a counter portion of the present invention reaches a terminal count. The memory element is placed in an opposing logical state whenever the counter achieves 1/2 of its programmed value. A duty cycle compensator makes small timing adjustments to compensate for any truncation error which occurs in dividing the rate signal by two.

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Gilbert, AZ, United States of America

Michael P LaMacchia