Infineon Technologies Ag

Michael Niendorf

Ivan Nikitin

Oliver Markus Kreiter

Ludwig Busch

Tomas Manuel Reiter

Thomas Stoek

Sanjay Kumar Murugan

Christian Neugirg

Ke Yan Tean

Waldemar Jakobi

Mei Fen Hiew

Angel Enverga

Elvis Keli

Marco Bäßler

Kean Ming Koe

Tian See Hoe

Bernhard Stiller

A power semiconductor module includes: an electrically insulative enclosure; a plurality of power semiconductor dies attached to a substrate inside the electrically insulative enclosure; a lead frame or clip frame disposed above the power semiconductor dies inside the electrically insulative enclosure and electrically connected to the power semiconductor dies; a plurality of contact pins attached to the lead frame or clip frame and protruding through a first side of the electrically insulative enclosure to form an electrical connection interface outside the electrically insulative enclosure; and a plurality of vibration dampeners attached to the lead frame or clip frame. The vibration dampeners protrude through the first side of the electrically insulative enclosure and are separate from the electrical connection interface. The vibration dampeners are configured to dampen vibrations at a circuit board designed to be mounted to the module and do not affect electrical operation of the power semiconductor module.

Power semiconductor module with vibration dampeners and power electronics system including the power semiconductor module

A power semiconductor module arrangement includes a power electronics substrate comprising a first DC voltage pad, a second DC voltage pad, a first load pad, and a second load pad, first and second transistor dies mounted on the first load pad, third and fourth transistor dies mounted the first DC voltage pad, the first and second transistor dies collectively form a first switch, the third and fourth transistor dies collectively form a second switch, the first and second DC voltage pads are arranged such that a DC supply impedance for a first commutation loop that flows through the first and third transistor dies matches a DC supply impedance for a second commutation loop that flows through the second and fourth transistor dies, and an impedance of a first load connection to the third transistor die is greater than an impedance of a second load connection to the fourth transistor die.

Power module layout for symmetric switching and temperature sensing

A power semiconductor module includes a leadframe having a first die pad, a second die pad separated from the first die pad, a first power lead formed as an extension of the first die pad, a second power lead separated from the first and second die pads, and a first connection region formed as an extension of the second power lead alongside the second die pad. A first plurality of power semiconductor dies is attached to the first die pad and electrically coupled in parallel. A second plurality of power semiconductor dies is attached to the second die pad and electrically coupled in parallel. A first electrical connection extends between the first plurality of power semiconductor dies and the second die pad in a first direction. A second electrical connection extends between the second plurality of power semiconductor dies and the first connection region in the first direction.

Power semiconductor module

A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.

Molded semiconductor module having a mold step for increasing creepage distance

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Verl, Germany

Michael Niendorf