Western Digital Technologies, Inc.

Sandisk Technologies Inc.

Micron Technology Incorporated

Michael Mostovoy

Gokul Kumar

Hem P Takiar

Yan Li

Venkatesh Ramachandra

Vinayak Ashok Ghatawade

Chih-Chin Liao

Ning Ye

Emilio Yero

Toshiki Hirano

Akio Nishida

Ekram H Bhuiyan

Srinivasa Rao Sabbineni

Various embodiments of the present disclosure relate to apparatuses and methods for regulators providing shared current from multiple input supplies. A regulator can include a first portion configured to receive a first supply voltage and to output a first current drawn from the first supply voltage by a load, and a second portion configured to receive a second supply voltage. The regulator can include a current control circuit configured to, responsive to a load current corresponding the load meeting a particular criteria, initiate current sharing such that the load current is subsequently shared between the first supply voltage and the second supply voltage.

Regulator providing shared current from multiple input supplies

A semiconductor device is disclosed including an integrated memory module. The integrated memory module may include a pair of semiconductor die, which together, operate as a single, integrated flash memory. In one example, the first die may include the memory cell array and the second die may include the logic circuit such as CMOS integrated circuits. In one example, the second die may be flip-chip bonded to the first die. The flip-chip bond pads on the first and second dies may be made small, with a small pitch, to allow a large number of electrical interconnections between the first and second semiconductor dies.

Manufacturing process for separating logic and memory array

A semiconductor device is disclosed including one or more integrated memory modules. Each integrated memory module may include a pair of semiconductor die, which together, operate as a single, integrated memory. In one example, the first die may include the memory cell array and the second die may include the logic circuit such as CMOS integrated circuits. In one example, the first die may be flip-chip bonded to the second die.

Bifurcated memory die module semiconductor device

A non-volatile storage system includes a plurality of memory dies and an interface circuit. Each memory die includes a wide I/O interface electrically coupled to another wide I/O interface of another memory die of the plurality of memory dies. The interface circuit is physically separate from the memory dies. The interface circuit includes a first interface and a second interface. The first interface comprises a wide I/O interface electrically coupled to a wide I/O interface of at least one of the memory dies of the plurality of memory dies. The second interface is a narrow I/O interface configured to communicate with an external circuit.

Non-volatile memory system with wide I/O memory die

A wide I/O semiconductor device is disclosed including a memory die stack wire bonded to an interface chip. The stack of memory die may be wire bonded to the interface chip using a wire bond scheme optimized for die-to-die connection and optimized for the large number of wire bond connections in a wide I/O semiconductor device. This method can achieve significant BW increase by improving packaging yield and costs, not possible with current packaging schemes.

Wire bonded wide I/O semiconductor device

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San Ramon, CA, United States of America

Michael Mostovoy