Koninklijke Philips Corporation N.v.

Philips Photonics Gmbh

Michael Miller

Stephan Gronenborn

Armand Pruijmboom

Raimond Louis Dumoulin

Holger Joachim Moench

Philipp Henning Gerlach

Mark Schuermann

Peter Dannberg

The invention describes a light emitting device (). The light emitting device () comprises at least one light emitting structure (), at least one processing layer () and at least one optical structure (). The optical structure () comprises at least one material processed by means of processing light (). The at least one processing layer () is arranged to reduce reflection of the processing light () in a direction of the optical structure () at least by 50%, preferably at least by 80%, more preferably at least by 95% and most preferably at least by 99% during processing of the material by means of the processing light (). It is a basic idea of the present invention to incorporate a non- or low-reflective processing layer () on top of a light emitting structure () like a VCSEL array in order to enable on wafer processing of light emitting structures () like microlens arrays. The invention further describes a method of manufacturing such a light emitting device ().

Light emitting device

The invention describes a method of manufacturing a VCSEL module () comprising at least one VCSEL chip () with an upper side (U) and a lower side (L) and with a plurality of VCSEL units () on a common carrier structure (), the VCSEL units () comprising a first doped layer () of a first type facing towards the lower side (L) and a second doped layer () of a second type facing towards the upper side (U). The method comprises the steps of dividing the VCSEL chip () into a plurality of subarrays () with at least one VCSEL unit () each, electrically connecting at least some of the subarrays () in series. The invention also describes a VCSEL module () manufactured in such process.

VCSEL module and manufacture thereof

The present invention relates to an optically pumped vertical external-cavity surface-emitting laser device comprising at least one VECSEL () and several pump laser diodes (). The pump laser diodes () are arranged to optically pump the active region () of the VECSEL () by reflection of pump radiation () at a mirror element (). The mirror element () is arranged on the optical axis () of the VECSEL () and is designed to concentrate the pump radiation () in the active region () and to form at the same time the external mirror of the VECSEL (). The proposed device avoids time consuming adjustment of the pump lasers relative to the active region of the VECSEL and allows a very compact design of the laser device.

Optically pumped vertical external-cavity surface-emitting laser device

The present invention relates to a method of assembling VCSEL chips () on a sub-mount (). A de-wetting layer () is deposited on a connecting side of the VCSEL chips () which is to be connected to the sub-mount (). A further de-wetting layer () is deposited on a connecting side of the sub-mount () which is to be connected to the VCSEL chips (). The de-wetting layers () are deposited with a patterned design or are patterned after depositing to define connecting areas () on the sub-mount () and the VCSEL chips (). A solder () is applied to the connecting areas () of at least one of the two connecting sides. The VCSEL chips () are placed on the sub-mount () and soldered to the sub-mount () to electrically and mechanically connect the VCSEL chips () and the sub-mount (). With the proposed method a high alignment accuracy of the VCSEL chips () on the sub-mount () is achieved without time consuming measures.

Method of assembling VCSEL chips on a sub-mount

It is an object of the invention to provide a VCSEL having both a high beam quality or a low M-factor, respectively, and a reduced mirror thickness which improves the heat dissipation due to the reduced thickness and the production cost. It is suggested to employ a Bragg-reflector in combination with a metal reflector terminating the distal side of the Bragg-reflector as seen from the laser cavity, wherein the metal reflector layer is localized at the center around the optical axis.

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Ulm, Germany

Michael Miller