Infineon Technologies Ag

Michael Melzl

Josef Schwaiger

Thilo Stache

Guenther Ruhl

Stephan Bradl

Andreas Strasser

Markus Hammer

Werner Kröninger

Reinhard Goellner

Doerthe Groteloh

Stephen Bradl

Walther Grommes

Matthias Stecher

Manfred Schneegans

Bernhard Weidgans

Paul-Werner Von Basse

Werner Robl

Domagoj Siprak

Christian Peters

Thomas Scheiter

Thomas Gutt

Roman Roth

Thomas Laska

Dirk Siepe

Reinhard Fischbach

Franziska Haering

Heinz Opolka

Thorsten Sasse

Markus Witte

Justin Bierner

Rainer Grossmann

Andreas Gaymann

Thomas Rosteck

Reinhard G&ouml;llner

Klaus Hammer

An electrolyte may be provided. The electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100&#xb0; C., and a water soluble metal salt, and the electrolyte may be free from carbon nanotubes. In various embodiments, a method of forming a metal layer may be provided: The method may include depositing a metal layer on a carrier using an electrolyte, wherein the electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100&#xb0; C. and a water soluble metal salt, wherein the electrolyte is free from carbon nanotubes; and annealing the metal layer to form a metal layer comprising a plurality of pores. In various embodiments, a semiconductor device may be provided. The semiconductor device may include a metal layer including a plurality of pores, wherein the plurality of pores may be formed in the metal layer as remnants of an additive having resided in the plurality of pores and having at least partially decomposed or evaporated. To keep a high elasticity over a wide temperature range (up to 450&#xb0; C.), an adhesion layer may stabilize the metal grain boundaries and may fix dislocation gliding inside metal grains. In various embodiments, a metal layer is provided. The metal layer may include a plurality of pores having ellipsoidal or spheroidal shape.

Electrolyte, method of forming a copper layer and method of forming a chip

The invention relates to an arrangement of electronic semiconductor components on a carrier system for treating the semiconductor components with a liquid medium. A semiconductor component is detachably mounted on the carrier system with the active side thereof in such a way that the arrangement comprises a gap at least in the edge region and partially between the semiconductor components and the carrier system. The aim of the invention is to provide a detachable arrangement of electronic semiconductor components on a mechanically stable carrier system for safely handling the semiconductor components during the production process, wherein the capillarity of the gap between the semiconductor components and the carrier system is reduced in a controlled manner, thus preventing the damaging effect of a liquid medium seeping into the gap. To this end, the surface of the carrier system is shaped in such a way that the gap is widened along the entire edge region thereof.

Treatment of a substrate with a liquid medium

An integrated circuit includes a substrate. A surface region of the substrate includes a contact pad region. A passivation layer stack includes at least one passivation layer. The passivation layer stack is formed over the surface region and adjacent to the contact pad region. An upper portion of the passivation layer stack is removed in, in a portion of the passivation layer stack proximate the contact pad region.

Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element

A workpiece machining method includes attaching a workpiece to a workpiece support with the aid of joining means. The workpiece and the workpiece support are joined to one another by an annular joining means. The composite produced is machined. The machined workpiece is separated from the workpiece support.

Method for machining a workpiece on a workpiece support

A semiconductor device exhibits a first metal layer, made of a first metal, with at least one contiguous subsection. At least one second metal layer, made of a second metal, is placed on the contiguous subsection of the first metal layer. The second metal is harder than the first metal. The second metal layer is structured to form at least two layer regions, which are disposed on the contiguous subsection of the first metal layer. The second metal exhibits a boron-containing or phosphorus-containing metal or a boron-containing or phosphorus-containing metal alloy.

Semiconductor device including a power device with first metal layer and second metal layer laterally spaced apart

In a method of processing a contact pad, a passivation layer stack including at least one passivation layer is formed on at least an upper surface of a contact pad region. A first portion of the passivation layer stack is removed from above the contact pad region, wherein a second portion of the passivation layer remains on the contact pad region and covers the contact pad region. An adhesion layer is formed on the passivation layer stack. The adhesion layer is patterned, wherein the adhesion layer is removed from above the contact pad region. Furthermore, the second portion of the passivation layer stack is removed.

Arrangement of electronic semiconductor components on a carrier system for treating said semiconductor components with a liquid medium

An electronic component is described and has a dielectric layer which is constructed on a substrate, conductive surfaces that are constructed on the dielectric layer, and an electrically conductive guard structure. The guard structure is disposed in a plane above the conductive surfaces such that the conductive surfaces are not completely covered by the guard structure.

Electronic component and utilization of a guard structure contained therein

Growing community of inventors

Neutraubling, Germany

Michael Melzl