Steag Ast

Ast Elektronik Gmbh

Michael Maurer

Heinrich Walk

Zsolt Nenyei

Wilfried Lerch

Alexander Gschwandtner

Thomas Knarr

Werner Blersch

Thomas Theiler

Helmut Merkle

Peter Gruenwald

A rapid thermal processing (RTP) chamber, wherein one wall of the chamber supporting a substrate rotates with respect to the rest of the chamber so that the substrate being treated in the RTP chamber is relatively rotated with respect to the lamps heating the substrate.

Rapid thermal processing (RTP) system with rotating substrate

A method for Rapid Thermal Processing (RTP) is presented, wherein the broadband reflectivity of an object is measured, and the results of the measurement used by the RTP system to adjust the RTP system parameters used in processing the object.

Method and apparatus for improved temperature control in rapid thermal

A method and apparatus for measuring the emission coefficient of a semiconductor material for light of wavelength .lambda. having photon energy less than the semiconductor bandgap energy is introduced. The reflection coefficient for the light of wavelength .lambda. is measured while the semiconductor material is being irradiated with sufficient light having photon energy greater than the bandgap energy that the semiconductor material transmits little light of wavelength .lambda., and the emission coefficient is calculated from the measured reflection coefficient. The temperature of the semiconductor material can be calculated from the emission coefficient and the measured intensity of the thermally emitted radiation of wavelength .lambda..

Method and apparatus for determining emissivity of semiconductor material

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Ulm, Germany

Michael Maurer