US Government As Represented by the Secretary of the Army

Michael Martinka

Juergen L Pohlmann

John H Dinan

Phillip R Boyd

Andrew J Stoltz, Jr

Andrew W Kaleczyc

J David Benson

Leo Anthony Almeida

A lithographic imaging method of the present invention includes the initial step of providing a substrate made from Mercury, Cadmium and Telluride materials (HgCdTe). The HgCdTe substrate is coated with a diazonaphthoquinone (DNQ) Novolak photoresist material to establish an imaging medium. The imaging medium is exposed to an image pattern and then developed in a tetra-methyl ammonium hydroxide (TMAH) solution. The TMAH solution includes a fullerene (C) material dissolved therein to retard the subsequent etching of the imaging medium. The incorporation of fullerene into the photoresist material indirectly via the developing solution avoids the solubility and ultraviolet (UV) absorbance disadvantages inherent in adding fullerenes directly to the photoresist prior to placement on the substrate. After development, the imaging medium is etched to transfer the recorded image pattern to the substrate. The fullerene cooperates with the photoresist material to slow the etching process, which allows for a highly reticulated HgCdTe detectors and IR images having greatly enhanced resolution.

Fullerene addition in photoresist via incorporation in the developer

Passivation of a mercury cadmium telluride surface is done by using square ave direct current, with the positive portion of the wave larger than the negative part.

Method of passivating mercury cadmium telluride using modulated DC

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Springfield, VA, United States of America

Michael Martinka