Arizona State University

Empire Technology Development LLC

Arizona Board of Regents, a Body Corporate

Michael Marrs

Emmett Howard

Douglas E Loy

Nicholas Munizza

Xan Henderson

Curtis D Moyer

Joseph T Smith

Shawn O'Rourke

Paul Yee

Barry O'Brien

Scott Ageno

Dirk Bottesch

Some embodiments include an electronic device. The electronic device includes a first scintillator layer, a transistor, and one or more device elements over the transistor, and the one or more device elements include a photodetector. Meanwhile, the first scintillator layer is monolithically integrated with at least one of the transistor or the one or more device elements. Other embodiments of related systems, devices, and methods are also disclosed.

Electronic devices and related methods

Some embodiments include an imaging system. The imaging system includes an active matrix pixel array having a flexible substrate and a pixel. The pixel includes a transistor over the flexible substrate, and the transistor includes multiple active layers having a first active layer and a second active layer over the first active layer. Further, the active matrix pixel array also includes a photodiode over the transistor, and the photodiode includes an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Meanwhile, the imaging system also includes a flexible scintillator layer over the active matrix pixel array. Other embodiments of related systems and methods are also disclosed.

Dual active layer semiconductor device and method of manufacturing the same

Some embodiments include a method. The method can comprise: providing a carrier substrate; providing an adhesion modification layer over the carrier substrate; providing a device substrate; and coupling the device substrate and the carrier substrate together, the adhesion modification layer being located between the device substrate and the carrier substrate when the device substrate and the carrier substrate are coupled together. In these embodiments, the adhesion modification layer can be configured so that the device substrate couples indirectly with the carrier substrate by way of the adhesion modification layer with a first bonding force that is greater than a second bonding force by which the device substrate couples with the carrier substrate absent the adhesion modification layer. Other embodiments of related methods and devices are also disclosed.

Method of providing a flexible semiconductor device and flexible semiconductor device thereof

Disclosed are tactile keys and methods for their production and use. The tactile key may include a substrate; a conductive layer disposed on at least one region of the substrate; a porous layer disposed on at least a portion of the conductive layer; an insulating layer disposed on regions of the substrate that surround the conductive layer and the porous layer to form a well, the well having sidewalls defined by the insulating layer, and a bottom surface at least partially defined by the porous layer; an electroactive polymer composition disposed in the well; and a flexible layer having a conductive coating on at least a portion of a surface facing the electroactive polymer composition, the flexible layer covering the well and at least a portion of the insulating layer surrounding the well. When the tactile key is depressed, an electric field is activated causing the electroactive polymer composition to move towards the flexible layer to provide a tactile feedback.

Tactile keys and methods for their production and use

Some embodiments include a method. The method can include providing a carrier substrate having an edge. Further, the method can include providing a cross-linking adhesive, and providing a flexible substrate having an edge. Further still, the method can include coupling the flexible substrate to the carrier substrate using the cross-linking adhesive such that at least a portion of the edge of the flexible substrate is recessed from the edge of the carrier substrate and such that the cross-linking adhesive has an exposed portion of the cross-linking adhesive at an offset portion of the first surface of the carrier substrate between the at least the portion of the edge of the flexible substrate and the edge of the carrier substrate. Meanwhile, the method can include etching the exposed portion of the cross-linking adhesive. Other embodiments of related methods and devices are also disclosed.

Some embodiments include a semiconductor device. The semiconductor device includes a transistor having a gate metal layer, a transistor composite active layer, and one or more contact elements over the transistor composite active layer. The transistor composite active layer includes a first active layer and a second active layer, the first active layer is over the gate metal layer, and the second active layer is over the first active layer. Meanwhile, the semiconductor device also includes one or more semiconductor elements forming a diode over the transistor. The semiconductor element(s) have an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Other embodiments of related systems and methods are also disclosed.

Some embodiments include a method of providing a semiconductor device. The method can include: (a) providing a flexible substrate; (b) depositing at least one layer of material over the flexible substrate, wherein the deposition of the at least one layer of material over the flexible substrate occurs at a temperature of at least 180&#xb0; C.; and (c) providing a diffusion barrier between a metal layer and an a-Si layer. Other embodiments are disclosed in this application.

Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof

In some embodiments, a method of etching an organosiloxane dielectric material can include: (a) providing the organosiloxane dielectric material; (b) providing a patterned mask over the organosiloxane dielectric material; and (c) reactive ion etching the organosiloxane dielectric material. Other embodiments are disclosed in this application.

Growing community of inventors

Phoenix, AZ, United States of America

Michael Marrs