Infineon Technologies Ag

Volkswagen Ag

Michael Mankel

Mark Nils Muenzer

Carlos Castro-Serrato

Carlos Castro

Jürgen Wassmuth

In one example, a method includes determining that an insulated-gate bipolar transistor (IGBT) is saturated, and while the IGBT is saturated, determining a collector-emitter saturation voltage (V) of the IGBT.

Insulated-gate bipolar transistor collector-emitter saturation voltage measurement

A power inverter includes a reference line operably provided with a reference potential and a supply line operably provided with a DC supply voltage with respect to the reference potential. A first half bridge includes a high-side switch and a low-side switch. The high-side switch is coupled between the supply line and a middle tap of the half bridge and the low-side switch is coupled between the middle tap and the reference line. The low-side switch is formed by a normally-on silicon carbide junction field effect transistor and the high-side switch is formed by a series circuit of a normally-on silicon carbide junction field effect transistor and a normally-off metal oxide field effect transistor.

Growing community of inventors

Biedenkopf, Germany

Michael Mankel