Ichor Systems, Inc.

Michael Maeder

Sean Joseph Penley

Daniel Thomas Mudd

Patti J Mudd

Marshall B Grill

Norman L Batchelor, Ii

Zachariah Ezekiel McIntyre

Matthew Eric Kovacic

Christopher Bryant Davis

Tyler James Wright

A gas flow control system for delivering a plurality of gas flows. The gas flow control system has a gas flow path extending from a gas inlet to first and second gas outlets. First and second flow restrictors are operably coupled to the gas flow path. First and second valves are operably coupled to the gas flow path such that when both first and second valves are in a fully open state, flows of gas from the first and second gas outlets are split according to the impedances of the first and second flow restrictors.

Flow control system, method, and apparatus

Apparatuses for controlling gas flow are important components for delivering process gases for semiconductor fabrication. In one embodiment, a gas flow control system for achieving improved transient response in apparatuses for controlling gas flow is disclosed. Specifically, by providing a command to an apparatus to deliver a predetermined mass flow rate at a future turn on time, the apparatus is able to pre-pressurize a P1 volume so that the response time of the apparatus is no longer dependent on the speed of the apparatus's control valves and the limitations of the control loop.

Method of achieving improved transient response in apparatus for controlling flow and system for accomplishing same

A mass flow control apparatus having a monolithic base. The monolithic base has a gas inlet, a gas outlet, a first flow component mounting region, a second flow component mounting region, and a third flow component mounting region. The first flow component mounting region has a first inlet port and a first outlet port, the first inlet port being fluidly coupled to the gas inlet of the monolithic base. The third flow component mounting region has a first sensing port fluidly coupled to the gas outlet of the monolithic base.

Apparatuses for controlling gas flow are important components for delivering process gases for semiconductor fabrication. In one embodiment, a method of achieving improved transient response in apparatuses for controlling gas flow is disclosed. Specifically, by providing a command to the apparatus to deliver a predetermined mass flow rate at a future turn on time, the apparatus is able to pre-pressurize a P1 volume so that the response time of the apparatus is no longer dependent on the speed of the apparatus's control valves and the limitations of the control loop.

Apparatuses for controlling gas flow are important components for delivering process gases for semiconductor fabrication. In one embodiment, a method of calibrating an apparatus for controlling gas flow is disclosed. Specifically, the apparatus may be calibrated on installation using a two-step process of measuring the volume of gas box downstream from the apparatus by flowing nitrogen gas into the gas box and measuring the resulting temperature and rate of pressure rise. Using the computed volume of the gas box, a sweep of several mass flow rates may be performed using the process gas and the gas map for the process gas. The apparatus is calibrated based on the measured temperature and pressure values, which allow calculation of the actual mass flow rate for the process gas as compared with the commanded mass flow rates.

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Reno, NV, United States of America

Michael Maeder