International Business Machines Corporation

Other

Infineon Technologies Ag

Michael M Iwatake

Yun Yu Wang

Ravikumar Ramachandran

Johnathan E Faltermeier

Viraj Yashawant Sardesai

David M Dobuzinsky

Jay William Strane

Werner Robl

Roy Charles Iggulden

Philip L Flaitz

Thomas Goebel

Michael Maldei

Keith K Wong

Padraic C Shafer

Kevin E Mello

Donna Diane Miura

Colleen M Snavely

Matthew Wayne Oonk

Amanda L Piper

Lisa Y Ninomiya

Chet Dziobkowski

Kwong Hon (Keith) Wong

A via contact is provided to a diffusion region at a top surface of a substrate which includes a single-crystal semiconductor region. The via contact includes a first layer which consists essentially of a silicide of a first metal in contact with the diffusion region at the top surface. A dielectric region overlies the first layer, the dielectric region having an outer surface and an opening extending from the outer surface to the top surface of the substrate. A second layer lines the opening and contacts the top surface of the substrate in the opening, the second layer including a second metal which lines a sidewall of the opening and a silicide of the second metal which is self-aligned to the top surface of the substrate in the opening. A diffusion barrier layer overlies the second layer within the opening. A third layer including a third metal overlies the diffusion barrier layer and fills the opening.

Via contact structure having dual silicide layers

In a method of fabricating a metallization structure during formation of a microelectronic device, the improvement of reducing metal shorts in blanket metal deposition layers later subjected to reactive ion etching, comprising:

Low Cu percentages for reducing shorts in AlCu lines

In a method of forming a contact, a liner reactive ion etch is affected on a substrate to remove silicon nitride and silicon oxide. An oxygen plasma ex-situ clean, a Huang AB clean, and a dilute hydrofluric acid (DHF) clean are affected. Amorphous silicon is deposited and an anneal is performed to regrow and recrystallize amorphous silicon.

Method to enhance epitaxial regrowth in amorphous silicon contacts

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Wappingers Falls, NY, United States of America

Michael M Iwatake