Superconductor Technologies Inc.

Antone Wireless Corporation

Resonant, Inc.

Michael M Eddy

Timothy W James

William L Olson

Robert B Hammond

Gregory Lynton Hey-Shipton

McDonald Robinson

Neal O Fenzi

Bryant Garcia

Andrew C Guyette

There are disclosed matrix filters having an input port and sub-filters connected between the input port and respective output ports. Each of the sub-filters includes a ladder circuit with n transversely-excited film bulk acoustic resonator (XBAR) series elements and n&#x2212;1 capacitor shunt elements, where n, the order of the sub-filter, is an integer greater than 2. Each sub-filter further has a first switch in parallel with a first capacitor shunt element and a second switch in parallel with a last capacitor shunt element.

Transversely-excited film bulk acoustic resonator matrix filters with switches in parallel with sub-filter shunt capacitors

A RF device such as a tower mounted amplifier (TMA), mast-head amplifier (MHA), or Tower Mounted Boosters (TMB) includes a housing having a plurality of cavities and an input and an output, the input being coupled to the antenna and the output being coupled to a base station. The housing includes a transmission path holding multiple coaxial resonators. The housing further includes multiple receive paths including at least one path having a plurality of cavities, each cavity containing a dielectric resonator. The metallic transmit resonator nearest the antenna input is coupled to the first dielectric resonator via a common resonant wire. The last dielectric resonator in the receive path is coupled to a first metallic resonator of a downstream clean-up filter via another common resonant wire.

Low noise figure radiofrequency device

A dielectric-based RF device such as a tower mounted amplifier (TMA), mast-head amplifier (MHA), or Tower Mounted Boosters (TMB) includes a housing having a plurality of cavities and an input and an output, the input being coupled to the antenna and the output being coupled to a base station. The housing includes a transmission path with a transmit filter. The housing further includes a receive path with at least one receive filter and a low noise amplifier. The receive filter includes a plurality of cavities with a dielectric-based resonator disposed in at least some of the plurality of cavities. In one aspect, the RF device has a volume of less than about 155 in. The RF device including the dielectric-based resonators has excellent out-of-band signal rejection with low loss. In addition, the RF device described herein is small enough to mount close to the antenna. The dielectric-based RF device has superior performance characteristics and a smaller footprint than conventional air cavity-based TMAs.

Dielectric loaded cavity filters for non-actively cooled applications in proximity to the antenna

A dielectric-based filter includes a thermally insulated housing, at least one filter formed from a dielectric material disposed inside the insulated housing, and a temperature maintenance device having a heating component and a cooling component for maintaining the temperature of the filter inside of the insulated housing within a temperature range. In a preferred aspect of the invention, the temperature maintenance device includes a thermoelectric cooler. The device permits the use of temperature-dependent low loss, high dielectric constant materials in filtering/resonator applications. During operation of the device, the dielectric-based filter is maintained at substantially room temperature.

Method and apparatus for stabilizing the temperature of dielectric-based filters

Novel structures and methods utilize layered copper oxide release materials to separate oxide films from growth substrates. Generally, the method comprises the steps of: first, forming a layered copper oxide sacrificial release material on a growth substrate, in the preferred embodiment being the high temperature superconductor YBCO grown on a compatible substrate such as LaAlO3, second, forming an oxide film on the layered copper oxide release material, in the preferred embodiment, a ferroelectric, an optical material or a oxide film compatible with further high temperature superconductor growth, such as SrTiO3 or CeO2, and third, etching the layered copper oxide release material so as to separate the oxide film from the growth substrate. Optionally, additional layers may be grown on the oxide film prior to etching. In the preferred embodiment, when high temperature superconducting devices are formed, the oxide films would be a material such as SrTiO3 or CeO2, upon which yet another high temperature superconducting film would be grown. After patterning and protecting the etched film, the structure may be etched. Generally, any of the layered copper oxide films, such as YBCO, TlCaBaCuO, LaSrCuOx and BiSrCaCuOx can be used. Oxide films having a substantially lower etch rate than the layered copper oxide materials incompatible with growth on the layered copper oxide materials may be utilized.

Method for epitaxial lift-off for oxide films utilizing superconductor

The present invention comprises a high quality, epitaxial thallium-based HTS thin film on MgO and other substrates and methods of providing the same. The present invention is achieved using a nucleation layer which provides a template for subsequent growth. Specifically, YBCO and/or YBCO analog films (films having growth characteristics and physical structures analogous to YBCO) are used as nucleation layer(s) on MgO and other substrates to enable the growth of epitaxial thallium-based HTS films.

Epitaxial thallium high temperature superconducting films formed via a

Methods and reactors are described for the production of high temperature superconductor films on a variety of substrates, particularly those films which include volatile components during their manufacture. The reactors are particularly useful for producing films containing thallium. The reactors provide for relatively low volume cavities in which the substrate is disposed, and control of the thallium oxide overpressure during the processing. In a preferred embodiment, one or more holes or apertures are made in the reactor to permit thallium and thallium oxide to controllably leak from the reactor. For manufacture of double sided superconducting films, a reactor is used having top and bottom plates each with one or more holes in them. Uniform high temperature superconducting films are obtained while inhibiting reaction between the substrate and superconducting film during the processing.

Reactor vessel for manufacture of superconducting films

Novel articles are provided of thin super-conductive thallium-based copper oxide layers on inorganic, usually crystalline substrates. Novel methods are provided for ease of producing such articles, particularly involving sol-gel techniques and laser ablation. The articles have a highly oriented superconductive thallium-based copper oxide film, particularly epitaxial, with high superconductive transition temperatures and desirable electrical properties. The subject articles find use in a wide variety of electronic applications, particularly in microwave and millimeter wave devices.

Epitaxial thin superconducting thallium-based copper oxide layers

Methods and reactors are described for the production of thallium cuprate based high temperature superconductor films on a variety of substrates. The reactors provide for low volume cavities, means for rapidly heating and cooling to and from a predetermined elevated temperature and control of the thallium oxide overpressure during the processing. Uniform high temperature superconducting films are obtained while inhibiting reaction between the substrate and superconducting film during the processing.

Controlled thallous oxide evaporation for thallium superconductor films

An epitaxial thallium-based copper oxide superconducting film is formed on a crystalline substrate by metalorganic deposition which comprises forming a film of carboxylate soap solution on said substrate, prepyrolyzing said film at a temperature of 350.degree. C. or less and pyrolyzing said film at a temperature of 800.degree.900.degree. C. in the presence of oxygen and an overpressure of thallium for a sufficient time to produce said epitaxial superconducting film.

Growing community of inventors

Santa Barbara, CA, United States of America

Michael M Eddy