Seagate Technology Incorporated

Michael M Collver

Wei C Hsie

Charles H Tolman

A magnetoresistive sensor includes a track width oxide layer which overlies a magnetoresistive element. Etch stop layers lie on opposite sides of the magnetoresistive element adjacent a magnetoresistive element. Contact/boundary control layers overlie the etch stop layer and lie adjacent the track width oxide layer. A separate loft oxide layer overlies the contact/boundary control layers and the track width oxide layer. The magnetoresistive sensor is formed by depositing a track width oxide to a thickness of the contact/boundary control layers.

Planarized magnetoresistive sensor

A magnetoresistive sensor having a magnetization vector M and a current density vector J which form an angle of approximately 45.degree.. Magnetic flux, which enters an active region of the magnetoresistive sensor approximately perpendicular to the magnetization vector M, propagates across the active region with substantially constant length thereby producing a rectangular shaped read sensitivity function. The current density vector J is directed with electrical contacts adjacent the active region which have high resistance regions and low resistance regions.

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Afton, MN, United States of America

Michael M Collver