International Business Machines Corporation

Michael M Armacost

Jack Allan Mandelman

Pai-Hung Pan

Hing Wong

Brian J Machesney

A semiconductor structure to prevent gate wrap-around and corner parasitic leakage comprising a semiconductor substrate having a planar surface. A trench is located in the substrate, the trench having a sidewall. An intersection of the trench and the surface forms a corner. A dielectric lines the sidewall of the trench. And, a corner dielectric co-aligned with the corner extends a subminimum dimension distance over the substrate from the corner.

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Wallkill, NY, United States of America

Michael M Armacost