Lucent Technologies Inc.

Columbia University

Agere Systems Inc.

Agere Systems Guardian Corp.

Brookhaven Science Associates, Lcc

Michael Louis Steigerwald

Ashraf W Lotfi

Lynn Frances Schneemeyer

Dean Paul Kossives

R Bruce Van Dover

Yiu-Huen Wong

Colin P Nuckolls

Anatoly Feygenson

Xavier Roy

Pierre Wiltzius

Boyuan Zhang

Sailesh Mansinh Merchant

Ioannis Kymissis

Gregory Peter Kochanski

Glen D Wilk

Bharat Kumar

Ananth Dodabalapur

Philip Kim

Luis Miguel Campos

Louis E Brus

Matthew Y Sfeir

Fay Ng

Samuel R Peurifoy

Martin G Meder

Susan M Zahurak

Cherry Ann Murray

Colin Nuckolls

Wei Wang

Xiaoyang Zhu

Andrew Brian Pun

Rongsheng Chen

Chulho Lee

Robert McIenore Fleming

Tuan M Trinh

Seok Ju Kang

Alfons Van Blaaderen

Sunmin Ryu

Magnus Rolf Berggren

Haitao Liu

Jingjing Yang

Alexander D Christodoulides

Samuel Nathan Sanders

Qizhi Xu

Amirali Zangiabadi

Lingyun Dai

Elena Meirzadeh

Elango Kumarasamy

Shenxiong Xiao

Christine McGinn

Jonathan A Malen

Yu Zhong

Paul VanNest Braun

Ionic superatomic materials that can be solution-processed into completely amorphous and homogeneous thin films are disclosed herein. The amorphous materials disclosed herein have tunable compositions and have electrical conductivities of up to 300 siemens per meter, thermal conductivities of 0.05 watt per meter per degree Kelvin, and optical transparencies of up to 92%. Application of these thin-films are also provided herein.

Solution-processable superatomic thin-films

The present invention provides soluble, stable singlet fission (SF) compounds, compositions, materials, methods of their use, and methods for their preparation that provide efficient intramolecular singlet fission (iSF) and multiple excitons. The SF compound may be a dimer, an oligomer, or a polymer of polyoligoacenes, where for example, the compound achieves a triplet yield reaching about 200% per absorbed photon. In this system, SF does not depend on intermolecular inter-actions. Instead, SF is an intrinsic property of the molecule and therefore occurs independent of intermolecular interactions. Singlet fission has the potential to significantly improve the photocurrent in single junction solar cells and thus raise the Shockley-Queisser power conversion efficiency limit from about 33% to about 46% or greater. Quantitative SF yield at room temperature has only been observed in crystalline solids or aggregates of higher acenes.

Quantitative intramolecular fission in oligoacenes, materials, and methods of use thereof

Organic perylene diimide-based compounds are provided. Methods of producing the organic compounds is also provided as well as methods of their use including, among other things, their use as organic semiconductor materials.

Organic semiconductor compounds and methods of use

A solid-state material comprising a solid-state compound is provided. The solid-state compound has the formula: [Cluster1][Cluster2], where Cluster1 can be a metal chalcogenide molecular cluster, Cluster2 a carbon cluster, and n the number of Cluster2 clusters in the solid-state compound. A method of forming a solid-state material is also provided.

Solid-state materials formed of molecular clusters and method of forming same

Systems and methods are disclosed herein for forming defects on graphitic materials. The methods for forming defects include applying a radiation reactive material on a graphitic material, irradiating the applied radiation reactive material to produce a reactive species, and permitting the reactive species to react with the graphitic material to form defects. Additionally, disclosed are methods for removing defects on graphitic materials.

Systems and methods for forming defects on graphitic materials and curing radiation-damaged graphitic materials

The present invention provides a power micromagnetic integrated circuit having a ferromagnetic core, a method of manufacture therefor and a power processing circuit employing the same, that-includes: (1) a substrate; (2) an insulator coupled to the substrate and (3) a metallic adhesive that forms a bond between the insulator and the ferromagnetic core to secure the ferromagnetic core to the substrate.

Micromagnetic device for power processing applications and method of manufacture therefor

A method of manufacturing an integrated circuit and an integrated circuit employing the same. In one embodiment, the method of manufacturing the integrated circuit includes (1) conformally mapping a micromagnetic device, including a ferromagnetic core, to determine appropriate dimensions therefor, (2) depositing an adhesive over an insulator coupled to a substrate of the integrated circuit and (3) forming the ferromagnetic core of the appropriate dimensions over the adhesive.

Integrated circuit having a micromagnetic device and method of manufacture therefor

An integrated circuit and method of manufacturing therefor. In one embodiment, the integrated circuit includes a substrate with an insulator and a capacitor formed over the substrate. The integrated circuit further includes an adhesive formed over the insulator. The integrated circuit still further includes a micromagnetic device. The micromagnetic device includes a ferromagnetic core formed over the adhesive. The adhesive forms a bond between the insulator and the ferromagnetic core to secure the ferromagnetic core to the substrate. The micromagnetic device also includes at least one winding, located proximate the ferromagnetic core, to impart a desired magnetic property to the ferromagnetic core. The micromagnetic device is electrically coupled to the capacitor.

A process for forming a metal oxide or a metal silicate gate dielectric layer on a semiconductor substrate is disclosed. A suitably prepared substrate is placed in a chamber. An organic precursor gas is flowed into the chamber. An inorganic precursor gas is then flowed into the chamber. The organic precursor gas catalyzes a reaction between itself, the inorganic precursor and the substrate to form a dielectric layer on the substrate.

Process for fabricating a semiconductor device having a metal oxide or a metal silicate gate dielectric layer

An integrated circuit includes a substrate, and at least one copper interconnection layer adjacent the substrate. The interconnection layer further comprises copper lines, each comprising at least an upper surface portion including at least one copper fluoride compound. The copper fluoride compound preferably comprises at least one of cuprous fluoride and cupric fluoride. The compounds of copper and fluoride are relatively stable and provide a reliable and long term passivation for the underlying copper. In accordance with one particularly advantageous embodiment of the invention, the dielectric layer may comprise a fluorosilicate glass (FSG) layer. Accordingly, during formation of the FSG layer, the upper surface of the copper reacts with the fluorine to form the copper fluoride compound which then acts as the passivation layer for the underlying copper. In other embodiments, the dielectric layer may comprise an oxide or air, for example. In yet other embodiments, the copper line may include prefluorinated portions so as to avoid fluorine depletion of adjacent FSG layer portions.

Integrated circuit including passivated copper interconnection lines and associated manufacturing methods

Method of making integrated circuit having a micromagnetic device

A structure, e.g., a photonic band gap material, exhibiting substantial periodicity on a micron scale is provided. Fabrication involves the steps of providing a template comprising a colloidal crystal, placing the template in an electrolytic solution, electrochemically forming a lattice material, e.g., a high refractive index material, on the colloidal crystal, and then removing the colloidal crystal particles to form the desired structure. The electrodeposition provides a dense, uniform lattice, because formation of the lattice material begins near a conductive substrate, for example, and growth occurs substantially along a plane moving in a single direction, e.g., normal to the conductive substrate. Moreover, because the electrochemically grown lattice is a three-dimensionally interconnected solid, there is very little shrinkage upon subsequent treatment.

Electrochemical process for fabricating article exhibiting substantial three-dimensional order and resultant article

A method for forming a dielectric film having a desired composition comprising sputtering a dielectric material onto a substrate to produce an intermediary film, the intermediary film incorporating one or more elements in addition to those elements included in the desired composition of the dielectric film; and removing the one or more additional elements from the intermediary film to produce the dielectric film having the desired composition.

Sputtering method for forming dielectric films

Integrated circuit having a micromagnetic device including a ferromagnetic core and method of manufacture therefor

For use with an integrated circuit having a substrate and an insulator coupled to the substrate, a micromagnetic device and method of manufacturing therefor. In one embodiment, the micromagnetic device includes an adhesive coupled to the insulator and a ferromagnetic core, coupled to the adhesive that forms a bond between the insulator and the ferromagnetic core, having an anisotropic property.

Micromagnetic device having an anisotropic ferromagnetic core and method of manufacture therefor

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Martinsville, NJ, United States of America

Michael Louis Steigerwald