Aixtron Se

Michael Long

Karl-Heinz Trimborn

Birgit Irmgard Beccard

Claudia Cremer

Markus Gersdorff

Baskar Pagadala Gopi

Andreas Poqué

Andy Eichler

Martin Dauelsberg

Nael Al Ahmad

A device for determining the partial pressure or concentration of a vapor in a volume includes a sensor element that can be caused to oscillate and temperature-controlled to a temperature below the condensation temperature of the vapor. The sensor element has an oscillation frequency that is influenced by a mass accumulation formed by condensed vapor on the sensor surface thereof. The rear side of the sensor element pointing away from the sensor surface contacts a thermal transfer surface of a thermal transfer element. The thermal transfer element is formed from an electrically heatable heating element that is connected to a cooling element in a thermally conductive manner by a thermal dissipation surface, which is different from the thermal transfer surface. The thermal transfer surface extends substantially parallel to the thermal dissipation surface.

Device and method for determining the concentration of a vapor

In a device and a method for generating vapor in a CVD or PVD device, particles are vaporized by bringing the particles into contact with a first heat transfer surface of a vaporization device. The vapor generated by vaporizing the particles is transported by a carrier gas out of the vaporization device and into a single or multistage modulation device. In a vapor transfer phase, second heat transfer surfaces of the modulation device are adjusted to a first modulation temperature, at which the vapor passes through the modulation device without condensing on the second heat transfer surfaces. At an intermission phase, the second heat transfer surfaces are adjusted to a second modulation temperature, at which at least some of the vapor condenses on the second heat transfer surfaces.

Apparatus and method for generating a vapor for a CVD or PVD device

A device and a method for depositing organic layers onto a substrate includes a process gas source with a temperature-controlled evaporator, and a carrier gas supply line which opens into the evaporator in order to supply a carrier gas flow into a temperature-controlled first transport line. A first dilution gas supply line, which opens into the first transport line, supplies a dilution gas flow into the first transport line. The device also comprises a temperature-controlled gas inlet element fluidly connected to the first transport line. A gaseous starting material can be supplied into a processing chamber via the gas inlet element. A substrate is disposed on a temperature-controlled susceptor located in the processing chamber, and a layer is grown on the substrate using the gaseous starting material.

Temperature-controlled gas supply line with dilution gas flows supplied at multiple locations

A device for carrying out a CVD process comprises a gas inlet element, which is arranged in a reactor housing and has a gas outlet plate, which faces a process chamber, comprises a porous material and has a multiplicity of gas outlet openings, which are fed with process gases from a gas distributing volume arranged in the gas inlet element. In order to improve production aspects of a gas inlet element, in particular for a CVD reactor with a large coating area, it is proposed that the porous material forms the core of the gas outlet plate, the surface segments of which that come into contact with the process gas are sealed.

Gas inlet element of a CVD reactor with weight-reduced gas outlet plate

A device and a method determines the concentration of a vapor in a volume, in particular for determining or controlling the mass flow of the vapor being conveyed through the volume by a carrier gas. The device comprises a sensor, which supplies a sensor signal that is dependent on the concentration or partial pressure of the vapor. The sensor has an oscillatory body that can be brought to oscillation, the oscillation frequency of which is influenced by a mass accumulation formed on a surface of the oscillating body by the condensed vapor. The oscillating body has a temperature control unit, by means of which the oscillating body can be brought to a temperature below the condensation temperature of the vapor. An evaluation unit determines the concentration or the partial pressure of the vapor from the temporal change of the oscillator frequency.

Device and method for determining the concentration of a vapor by means of an oscillating body sensor

In a method and a device for generating vapor for a CVD or PVD device, liquid or solid particles of a first source material are fed into a first heat transfer body via a first feed line. The first heat transfer body vaporizes the particles into a first vapor, which is transported by a carrier gas from the first heat transfer body into a second heat transfer body arranged after the first heat transfer body. The first heat transfer body is heated to a first temperature, and the second heat transfer body is heated to a second temperature. Liquid or solid particles of a second source material are fed into a second heat transfer body via a second feed line. The second heat transfer body vaporizes the particles into a second vapor, which is transported along with the first vapor out of the second heat transfer body by the carrier gas.

Device and method for generating a vapor for a CVD or PVD device from multiple liquid or solid source materials

In a device for generating a vapor for a CVD or PVD apparatus, at least two thermal transfer bodies are arranged successively in the direction of flow of a carrier gas. The device also includes an inlet pipe for feeding an aerosol to one of the thermal transfer bodies for vaporization of the aerosol by bringing the aerosol particles into contact with thermal transfer surfaces of the thermal transfer body. At least one of the thermal transfer bodies has an opening for an inlet pipe that has a first flow channel for feeding the aerosol in and a second flow channel for feeding a carrier gas in. Gas passage openings are provided through which the carrier gas flows out of the second flow channel into the first flow channel. The second flow channel is sealed in the area of the mouth of the inlet pipe.

Growing community of inventors

Herzogenrath-Kohlscheid, Germany

Michael Long