Seoul Semiconductor Co., Ltd.

Seoul Viosys Co., Ltd.

Michael Lim

Ki Bum Nam

Kwang Yong Oh

Myung Jin Kim

Sang Shin Park

Ji Youn Oh

Chung Hoon Lee

Motonobu Takeya

Hyuck Jung Choi

Chang Ik Im

A light emitting diode package including: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

Light emitting device

A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.

Disclosed herein are a light emitting device and a method of making the same. The light emitting device includes: a substrate including a first lead and a second lead; a light emitting diode disposed over the first lead of the substrate, including a second conductive-type semiconductor layer, an active layer, and a first conductive-type semiconductor layer, and emit near ultraviolet light; and a wavelength conversion unit disposed over the light emitting diode and spaced apart from the light emitting diode, wherein the light emitting structure has semi-polar or non-polar characteristics, the wavelength conversion unit has a multi-layered structure including a first phosphor layer and a second phosphor layer, and the light emitting diode is driven at a current density which is equal to or greater than 350 mA/mm.

High power light emitting device and method of making the same

A light emitting device is disclosed. The light emitting device includes: a light emitting diode emitting light having a peak wavelength in the range of 415 nm to 435 nm; and a wavelength conversion unit disposed on the light emitting diode, wherein the wavelength conversion unit includes cyan phosphors emitting light having a peak wavelength in a cyan light wavelength band and red phosphors emitting light having a peak wavelength in a red light wavelength band, and a ratio of an output of light having a wavelength in the range of 435 nm to 465 nm to a total output of light emitted from the light emitting device is approximately equal to or less than 3%.

Growing community of inventors

Ansan-si, South Korea

Michael Lim