Leybold Systems Gmbh

Other

Oerlikon Deutschland Holding Gmbh

Michael Liehr

Friedrich Anderle

Wilfried Dicken

Rolf Adam

Klaus Nauenburg

Gunter Brauer

Heinrich Grunwald

Heinrich Gr&uuml;nwald

J&uuml;rgen Henrich

Lothar Sch&auml;fer

Rudolf Beckmann

Claus-Peter Klages

In an apparatus for depositing polycrystalline diamond by plasma technology onto substrates ( ) of large area, having a process chamber ( ) with airlock ( ), a plurality of microwave plasma sources ( , . . . ) arranged in a common plane above the substrates ( ) and extending transversely across the direction of substrate advancement, and gas inlet and gas outlet tubes ( , . . . ) leading into the process chamber ( ) are provided, a plurality of gas inlet and gas outlet tubes distributed over the length of the source are associated with each of the linear sources ( , . . . ), and the outlet openings of the gas inlet tubes being situated each directly above the linear source ( , . . . ), and the openings of the gas outlet tubes ( , . . . ) each in the area between two linear sources ( , . . . ) and in a plane which extends approximately through the core axes ( ) of the linear sources ( , . . . ).

Device for the plasma deposition of a polycrystalline diamond

Method for transporting at least one vaporous substance through the wall ( ) of a vacuum chamber and into the vacuum chamber and device for executing and utilizing the method. In the method, a vaporous substance is introduced from the outside through an interior pipe ( ) of a double-walled pipe into the vacuum chamber, with electric current from a power supply ( ) applied to the interior pipe ( ) and exterior pipe ( ) of the double-walled pipe.

Method for transporting at least one vaporous substance through the wall of a vacuum chamber and into the vacuum chamber and a device for executing and utilizing the method

A process and device is shown for coating the delineating surfaces of a hollow object, preferably a hollow object having at least one sealable opening, by means of plasma coating, via the action of plasma on the delineating surface of the hollow object that is to be coated.

Process for coating plastic containers or glass containers by means of a PCVD coating process

A device for producing plasma includes an isolating pipe formed of an isolating material, a rod-shaped conductor positioned inside of the pipe, the rod-shaped conductor having an inner diameter that is smaller than the diameter of the of the isolating pipe, and an inner alternating electromagnetic field source connected to a first end of the conductor. The device also includes a conductive pipe positioned inside of the isolating pipe and concentrically around the conductor, the conductive pipe being formed so as to partially enclose the conductor, and an outer alternating electromagnetic field source connected to a first end of the conductive pipe.

Device for producing plasma

For an arrangement for producing plasma in a vacuum chamber (,) with the aid of electromagnetic alternating fields, a rod-shaped conductor (,) is guided though a vacuum chamber (,) within a tube (,) of insulating material, with the inner diameter of the insulating tube (,) being greater than the diameter of the conductor (,) and at least one end of the insulating tube (,) being held in a wall (,) of the vacuum chamber (,) and the outer surface of the insulating tube being sealed with respect to the vacuum chamber, with at least one end of the conductor (,) being connected to a first source (,) for producing electromagnetic alternating fields and the region of the section of the rod-shaped conductor (,) which extends into the vacuum chamber (,) being in the form of a helix (,), with the winding length (L) of said section amounting to L&equals;C/cos(&agr;) for a wavelength &lgr;,&equals;10&deg;<&agr;<15&deg;.

Arrangement for producing plasma

A device for producing plasma in a vacuum chamber (,) with the help of electromagnetic alternating fields, in which a rod-shaped conductor (,) that is inside a pipe (,) and is made of an insulating material and is guided into the vacuum chamber (,). The inner diameter of the insulating pipe (,) is larger than the diameter of the conductor (,). The insulating pipe (,) is held in the wall (,) of the vacuum chamber (,) at one end, and its outer surface is sealed across from the vacuum chamber wall. The conductor (,) is connected to a source (,) for producing the electromagnetic alternating field. A pipe-shaped conductor (,) extends coaxially to the rod-shaped conductor (,) in the annulus formed by the rod-shaped conductor (,) and the insulating pipe (,), whereby the radial inner ring slot (,) formed between the rod-shaped conductor (,) and the pipe-shaped conductor (,) corresponds to the waveguide (,) of the source (,). The radial outer ring slot (,) formed by the insulating pipe (,) and the pipe-shaped conductor (,) is connected to the waveguide (,&prime;) of a second source (,).

In a device for generating plasma in a vacuum chamber (9) with the aid of alternating electromagnetic fields, at least one rod-shaped conductor (7) is guided inside of a tube (16) made of insulating material through the vacuum chamber (9), the insulating tube (16) is held at its ends in one or in the opposing walls (6;17,17a) of the vacuum chamber (9) and is sealed off, wherein one or both ends of the rod-shaped conductor (7) are connected to a generator (18,19), wherein one or both ends of the rod-shaped conductor (7) are surrounded by outer conductors (20,21), each extending from the generator (18,19) to the respective inside wall surface (22,22a) of the vacuum chamber (9), wherein, in the area of the wall passages, the rod-shaped conductor (7) connected to the sources (18,19) and the outer conductors (20,21) surrounding it are each provided with a branch constituting a bypass (23,24), wherein a second rod-shaped conductor (26) extending into or through the vacuum chamber (9) surrounded by a second insulating tube (25), is connected to each of these bypasses (23,24), wherein the length of each bypass amounts to .lambda./2.

Device for plasma generation

For the application of a scratch protection layer on plastic substrates, a plasma is produced by the plasma CVD method, away from the individual plastic substrate, in an excitation gas, and this excitation gas is supplied through a tube to the plastic substrate. Subsequently, an antireflection layer is applied by means of a gas flow sputter source. The apparatus provided for this has a plasma CVD chamber (1) and a gas flow sputter chamber (2), next to one another. The plastic substrates (7,8) to be coated are transported from the plasma CVD chamber (2) to the gas flow sputter chamber (1) with the aid of a transporting device (3), designed as a turning plate.

Method for the application of a scratch protection layer and an

A sputtering cathode based on the magnetron principle, with a target of the material to be sputtered having a minimum of one component, with a magnetic system located beneath the target and having magnetic sources of different polarization which form a minimum of one self-enclosed tunnel of arcuate magnetic lines of force, having the poles of the sources facing away from the target connected to each other via a magnetic yoke made of a material of low retentivity, the bodies forming the sources of the magnetic fields being right prisms, and preferably right parallelepipeds, the base edges of which run parallel to the target plane, with the magnetic lines of force of the sources running at inclined angles relative to the base surfaces of the bodies.

Sputtering cathode based on the magnetron principle

In an apparatus for the deposition of polycrystalline diamond on large, flat substrates (3) by the plasma method, with a vacuum chamber (4); with locks for the inward and outward transfer of the substrates; with a device installed in the chamber (4) for conveying the substrates (3) through at least one, preferably through two treatment stations; with hot-filament sources (5, 5', . . . ) forming a first group, installed above the plane of the substrates; with microwave plasma sources (8, 8', . . . ) forming a second group; with an electrode (11) fed with radio frequency underneath the plane of the substrates for generating a bias voltage; and with gas feed pipes (6, 9) opening into the vacuum chamber (4), the hot-filament arrangements (5, 5', . . . ), designed as linear sources, are arranged transversely to the substrate transport direction (a) and form a first coating zone (Z.sup.1), where the microwave plasma sources (8, 8', . . . ) are arranged in a row a certain distance away from, and parallel to, the hot-filament sources (5, 5', . . . ) and form together a second coating zone (Z).

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Feldatal, Germany

Michael Liehr