Other

Aol Inc.

International Business Machines Corporation

Infineon Technologies Ag

Siemens Aktiengesellschaft

Facebook, Inc.

Infineon Technologies North America Corp.

Infineon Technologies LLC

Michael Lester Wise

David L Biderman

David S Bill

Conor Patrick Cahill

Scott K Brown

Stephen E Loomis

David Wexelblat

David F Pare

Jeremy K Stephens

Jingyu Lian

Nicolas Nagel

Louis L C Hsu

Andreas Knorr

Lawrence Alfred Clevenger

Laertis Economikos

Chenting Lin

Suri G Hedge

Jack Allan Mandelman

Helmut Horst Tews

Chandrasekhar Narayan

Jochen C Beintner

Kwong Hon Wong

Stephan Kudelka

Mihel Seitz

Larry Clevenger

Greg Costrini

Howard M Singer

Raymond R Sainz

Stephen Rahn

Young Limb

Carl Dewitt

Christian Dubuc

Kory Kime

An initialization vector (IV) is employed to decrypt a block of a stream that has been encrypted with Cypher Block Chaining (CBC) encryption, without requiring decryption of previous blocks within the stream. For example, a listener who accesses a distribution point to retrieve encrypted content authenticates himself to an application server that regulates access to encrypted content on the distribution point, and responsively receives a key. The listener then requests access to a reference point within the encrypted content stream somewhere after its beginning (e.g., using preview clips). The distribution point relates the reference point to a corresponding block of the encrypted stream, and identifies an IV previously used for encryption of that block. The distribution point provides the associated encrypted block of content and the IV to the listener to enable mid-stream rendering of the encrypted content, without requiring the listener to decrypt previous blocks within the encrypted stream.

System and method for using a streaming protocol

The disclosure details the implementation of an apparatus, method, and system for an integrated data security layer (IDSL). In one aspect, the IDSL enables entities wishing to control users' data access, whether they are content owners, corporate system administrators, or concerned parents wishing to prevent ill-gotten data to work across their systems, to manage the access of content. The IDSL provides the ability to curb such unwanted access of data. The IDSL has the ability to obtain content information, policy rules regarding the content, and unique identifiers for the content from content providers and/or their proxies. Further, the IDSL has the ability to provide such information to IDSL clients. Such clients employ the obtained information to analyze and control access to the content. Additionally, the IDSL may act as a lookup facility to create, maintain, and update associations between a content information, policy rules, and unique identifiers of content, and any other associated information as detailed throughout. The IDSL coordinates with an IDSL database to identify interassociated items in the generation of entries regarding any related information.

Apparatus, method and system to implement an integrated data security layer

An interconnect includes an opening formed in a dielectric layer. A conductive barrier is deposited in the opening, over which a first conductive layer is deposited. A conductive oxide is deposited over the first conductive layer, and a second conductive layer, formed from the same material as the first conductive layer, is deposited over the conductive liner.

Multi-layer electrode and method of forming the same

A motorcycle comprises a chassis, a windshield attached to the chassis, and a speed sensor operative to determine instantaneous speeds of the motorcycle as the motorcycle travels. In addition, the motorcycle further comprises a position table and a windshield positioning device. The position table associates windshield positions in relation to the chassis with respective speeds of the motorcycle. The windshield positioning device is operative to move the windshield to the windshield positions associated in the position table with the instantaneous speeds of the motorcycle determined by the speed sensor.

Self-adjusting motorcycle windshield

Si, Al, Al plus TiN, and IrO2 are used as adhesion layers to prevent peeling of noble metal electrodes, such as Pt, from a silicon dioxide (SiO) substrate in capacitor structures of memory devices.

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CMP of integrated circuits containing DRAM arrays with trench capacitors fill the trenches with oxide, resulting in a an array of oxide structures that is dense compared with the concentration in the surrounding support structures and therefore has a higher loading. A conformal layer is deposited over the wafer, increasing the loading in the array, but filling in spaces between active areas. A blanket etch removes material in both the array and the supports. A block etch balances the amount of material in the array and the supports. A supplementary oxide deposition in the array fills spaces between the structures to a nearly uniform density.

TEOS assisted oxide CMP process

A method of forming deep isolation trenches in the fabrication of ICs is disclosed. The substrate is prepared with deep isolation trenches. The isolation trenches are partially filled with a first dielectric material. An etch mask layer is deposited on the substrate and used to remove excess first dielectric material on the surface of the substrate. The isolation trenches are then completely filled with a second dielectric material. Excess second dielectric material is then removed from the surface of the substrate.

Deep isolation trenches

A Dynamic Random Access Memory is fabricated in a semiconductor body of a first conductivity type in which there have been formed an array of memory cells which each include a trench capacitor and a vertical Insulated Gate Field Effect Transistor (IGFET). Each IGFET includes first and second output regions of a second opposite conductivity type and a gate which is separated from a surface of the semiconductor body by a gate dielectric layer. A gate electrode connected to the gate is formed using a Damascene process with insulating sidewall spacer regions being formed before the gate electrode is formed. Borderless contacts, which are self aligned, are made to the first output regions of each transistor using a Damascene process.

Method for fabricating transistors having damascene formed gate contacts and self-aligned borderless bit line contacts

A multi-layer electrode ( ) and method of fabrication thereof in which a conductive region ( ) is separated from a barrier layer ( ) by a first conductive liner ( ) and a second conductive liner ( ). First conductive layer ( ) comprises Pt, and second conductive liner ( ) comprises a thin layer of conductive oxide. The multi-layer electrode ( ) prevents oxygen diffusion through the top conductive region ( ) and reduces material variation during electrode patterning.

Multi-layer Pt electrode for DRAM and FRAM with high K dielectric materials

A semiconductor structure includes a diamond-like carbon layer as a polish-stop for patterning a metal level into an inter-level dielectric substrate in a damascene process flow. The semiconductor structure includes a substrate having a dielectric layer followed by the diamond-like carbon layer on a surface thereof. The diamond-like carbon layer is used as a hard-mask for forming conductive metal features from grown substrate material that fills a plurality of openings in the substrate, therein forming a semiconductor island structure, The semiconductor structure has a planar surface at the diamond-like carbon layer and the grown substrate material, whereby the diamond-like carbon polish-stop layer allows for over-planarization of the semiconductor island structure to provide an improved planar surface having a sufficient decrease in topography.

Semiconductor device with diamond-like carbon layer as a polish-stop layer

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Poughkeepsie, NY, United States of America

Michael Lester Wise