Entegris, Inc.

Cabot Microelectronics Corporation

Other

Sun Chemical Corporation

Scientific Games Royalty Corporation

Michael L White

Daniela White

Lamon Jones

Brian Reiss

Jeffrey Gilliland

Donald Frye

Jun Liu

Atanu Das

Elizabeth Thomas

John Clark

Emanuel Israel Cooper

Youngmin Kim

Steven M Bilodeau

Brian A Johnson

Selvaraj Palanisamy Chinnathambi

Ke Zhang

Tong Li

Julie A Mottes

YoungMin Kim

Thomas Parson

Patricia E White

Hon-Wu Lau

Chao-Yu Wang

Lee E Cannon

Philippe Schottland

Steven Grumbine

Kevin J Moeggenborg

Ralph Francis Arcurio

Timothy P Johns

Steven Lippy

Zhan Chen

SeongJin Hong

Nilesh Gunda

WonLae Kim

Hon Wu Lau

James Coleman

Eric Hong

Josie M Rosen

Juhee Yeo

John C Philipp

JeongYeol Yang

SeungHyun Chae

Steven Medd

Akshay Rajopadhye

Alicia Walters

Tsung-Ho Lee

Richard Romine

Danela White

Shrane-Ning Jenq

Volley Wang

Chun-I Lee

The present disclosure relates to removal compositions for at least partially removing post-chemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.

Cleaning composition with molybdenum etching inhibitor

The invention provides compositions useful in post-CMP cleaning operations where ceria is present. In one aspect, the invention provides a composition comprising a reducing agent; a chelating agent; an amino(C-Calkyl)alcohol; and water; wherein the composition has a pH of less than about 8. The compositions of the invention were found to show improved ceria removal on, for example, poly silicon (poly Si) substrates. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in one or more containers, selected components of the compositions.

Post CMP cleaning composition

In general, the invention provides high pH cleaning compositions for dielectric surfaces such as PETEOS, SiO, thermal oxide, silicon nitride, silicon, etc. The compositions of the invention afford superior surface wetting, dispersion of particles and organic residues, and prevents redeposition and re-agglomeration of the dispersed residue during cleaning to afford superior cleaning and low defectivity.

Post CMP cleaning compositions

A cleaning composition is disclosed for cleaning residue and/or contaminants from microelectronic devices having same thereon. The composition comprises at least one complexing agent, at least one cleaning additive, at least one pH adjusting agent, water, and at least one oxylamine compound. Advantageously, the compositions show effective cleaning of cobalt-containing substrates and improved cobalt compatibility.

Compositions and methods for post-CMP cleaning of cobalt substrates

The invention provides a composition and method for improving the selectivity of nitride etching versus oxide etching and can be used with conventional phosphoric acid wet etch compositions. The invention describes additives that serve to inhibit silicon, oxides, and related compounds regrowth (i.e., redeposition) on the silicon oxide surface. In certain embodiments, the invention provides certain amino-substituted aryl compounds which are bound to a tri-alkoxy silane.

Wet etching composition and method

An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 &#x212b;/min.

Method and composition for etching molybdenum

A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

Compositions and methods for removing ceria particles from a surface

A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.

Cleaning composition with corrosion inhibitor

The present invention generally relates to a removal composition and process, particularly useful for cleaning ceria particles and CMP contaminants from microelectronic devices having said particles and CMP contaminants thereon, in particular microelectronic devices having PETEOS, Silicon Nitride, and Poly-Si substrates. In one aspect, the invention provides treatment of the microelectronic substrate having ceria particles thereon utilizing complexing agents free of Sulfur and Phosphorous atoms.

Ceria removal compositions

The disclosure generally relates to a composition and process for cleaning residue and/or contaminants from microelectronic devices having said residue and contaminants thereon. The residue may include post-CMP, post-etch, and/or post-ash residue. The compositions and methods are particularly advantageous when cleaning a microelectronic surface comprising copper, low-k dielectric materials, and barrier materials comprising at least one of tantalum-containing material, cobalt-containing material, tantalum-containing, tungsten-containing, and ruthenium-containing material.

A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, or tungsten-containing materials.

Post chemical mechanical polishing cleaning compositions

The invention provides a removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device.

Post CMP cleaning compositions for ceria particles

A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.

Tungsten post-CMP cleaning composition

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.

Post chemical mechanical polishing formulations and method of use

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Oswego, IL, United States of America

Michael L White