Texas Instruments Corporation

Michael L Krumnow

Christo Pavel Bojkov

A metal structure () for a bonding pad on integrated circuit wafers, which have interconnecting metallization () protected by an insulating layer () and selectively exposed by windows in the insulating layer. The structure comprises a patterned seed metal layer () positioned on the interconnecting metallization exposed by the window so that the seed metal establishes ohmic contact to the metallization as well as a practically impenetrable seal of the interface between the seed metal and the insulating layer. Further, a metal stud () is formed on the seed metal and aligned with the window. The metal stud is conformally covered by a barrier metal layer () and an outermost bondable metal layer ().

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Plano, TX, United States of America

Michael L Krumnow