Palo Alto Research Center Inc.

University of California

Mitsubishi Chemical Corporation

Other

Xerox Corporation

The Mitsubishi Chemical Corporation, a Japanese Corporation

Palo Alto Research Institute Incorporated

Michael L Chabinyc

William S Wong

Ana Claudia Arias

Tse Nga Ng

Alberto Salleo

Robert Anthony Street

Eric Peeters

Scott Alan Elrod

Richard H Bruce

Rene A Lujan

Scott J Limb

David Kirtland Fork

Meng H Lean

Jurgen Hans Daniel

Steven E Ready

Thomas Hantschel

John Stuart Fitch

Huangpin Ben Hsieh

Bryan Thomas Preas

Christopher L Chua

Eugene Michael Chow

Raj B Apte

Patrick Yasuo Maeda

Armin R Volkel

Hengbin Wang

Jeng Ping Lu

Armin Rainer Völkel

Beverly Russo

Hidenori Nakayama

Frank Torres

Jackson H Ho

Pengfei Qi

Kateri E Paul

Javier Read De Alaniz

Kyle D Clark

Julia Schneider

Craig Jon Hawker

Francisco Eduardo Torres

Ashish V Pattekar

Alan J Heeger

Michael A Kneissl

Alan G Bell

John E Northrup

Gregory B Anderson

Fred Wudl

Stephen David White

Mark Teepe

Sanjiv Sambandan

Edward J Kramer

Shinji Aramaki

Christopher M Bates

Jeffrey J Urban

H Ben Hsieh

Nelson E Coates

Takaaki Niinomi

Boris Russ

Ayaskanta Sahu

Jason D Forster

Chinnwen Shih

Jared Lynch

Shrayesh Naran Patel

Chan Luo

Jeffrey Self

Adam E Levi

Renxuan E Xie

Sanjoy Mukherjee

Veronica G Reynolds

Sung-Yu Ku

Christopher Liman

Yonghao Zheng

JengPing Liu

Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250° C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5×10S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.

N-type dopants for efficient solar cells

A composition of matter including a crosslinked bottlebrush polymer, wherein the crosslinker units in the composition of matter are soluble with the bottlebrush polymer. In one example, the crosslinked bottlebrush polymer is tailored as a single phase (solvent free) elastomer useful in a capacitive pressure sensing device. A novel embodiment of the present invention further includes demonstration of a universal approach to form solvent-free bottlebrush polymer networks by photo-crosslinking mixtures of well-defined bottlebrush precursors and bis-benzophenone-based additives. This method has been proven effective with a wide variety of different side-chain chemistries.

Capacitive pressure sensor with bottlebrush elastomer dielectric layer for low pressure sensing

Triazabicylodecene can effectively n-dope a variety of organic semiconductors, including PCBM, thus increasing in-plane conductivities. We synthesized a series of TBD-based n-dopants via an N-alkylation reaction and studied the effect of various alkyl chains on the physical and device properties of the dopants. Combining two TBD moieties on a long alky chain gave a solid dopant, 2TBD-C10, with high thermal stability above 250&#xb0; C. PCBM films doped by 2TBD-C10 were the most tolerant to thermal annealing and reached in-plane conductivities of 6.5&#xd7;10S/cm. Furthermore, incorporating 2TBD-C10 doped PCBM as the electron transport layer (ETL) in methylammonium lead triiodide (MAPbI) based photovoltaics led to a 23% increase in performance, from 11.8% to 14.5% PCE.

Sulfur-fused perylene diimides (PDIs) having the formula 2PDI-nS, wherein n is an integer. Such sulfur-fused PDIs (e.g., 2PDI-2S, 2PDI-3S, and 2PDI-4S) are incorporated as electron acceptors in an active region of a bulk heterojunction solar cell and/or as an electron transport layer. Example solar cells exhibit a power conversion efficiency above 5% and a fill factor above 70% (a record high for non-fullerene bulk heterojunction solar cell devices) when 2PDI-nS is used as the electron acceptor. In addition, the solar cells exhibit low open circuit voltage (V) loss.

Efficient solar cells via sulfur-fused helical perylene diimides design concept

A method for enhancing charge carrier mobility of a field-effect transistor device. The method comprises generating uniaxial nanogrooves on a substrate and blade coating a solution comprising a semiconducting polymer onto the substrate. The polymer solution is spread onto the substrate in a direction parallel to the nanogrooves and a main-chain axis of the polymer is parallel to the nanogrooves. The semiconducting polymer can be then annealed, so that a polymer film is formed which is layered on top of the substrate, with polymer chains aligned parallel to a direction of charge carrier movement.

Blade coating on nanogrooved substrates yielding aligned thin films of high mobility semiconducting polymers

This disclosure provides systems, methods, and apparatus related to thermoelectric materials. In one aspect, a method includes providing a plurality of nanostructures. The plurality of nanostructures comprise a thermoelectric material, with each nanostructure of the plurality of nanostructures having first ligands disposed on a surface of the nanostructure. The plurality of nanostructures is mixed with a solution containing second ligands and a ligand exchange process occurs in which the first ligands disposed on the plurality of nanostructures are replaced with the second ligands. The plurality of nanostructures is deposited on a substrate to form a layer. The layer is thermally annealed.

Nanostructured layers of thermoelectric materials

A method of fabricating an organic device is provided comprising providing a first solution comprising an organic semiconductor or a precursor thereof; a solvent and a decomposable polymer additive, where the polymer additive is heated so that it decomposes into gas. The method is applicable to large scale fabrication of OLEDs, OPVs and OFET devices.

Organic electronic devices prepared using decomposable polymer additives

A method of depositing elongated nanostructures that allows accurate positioning and orientation is described. The method involves printing or otherwise depositing elongated nanostructures in a carrier solution. The deposited droplets are also elongated, usually by patterning the surface upon which the droplets are deposited. As the droplet evaporates, the fluid flow within the droplets is controlled such that the nanostructures are deposited either at the edge of the elongated droplet or the center of the elongated droplet. The described deposition technique has particular application in forming the active region of a transistor.

Method for aligning elongated nanostructures

In transistor structures such as thin film transistors (TFTs) in an array of cells, a layer of semiconducting oxide material that includes a channel is protected by a protective layer that includes low-temperature encapsulant material. The semiconducting oxide material can be a transition metal oxide material such as zinc oxide, and can be in an active layered substructure that also includes channel end electrodes. The low-temperature encapsulant can, for example, be an organic polymer such as poly(methyl methacrylate) or parylene, deposited on an exposed region of the oxide layer such as by spinning, spincasting, evaporation, or vacuum deposition or an inorganic polymer deposited such as by spinning or liquid deposition. The protective layer can include a lower sublayer of low-temperature encapsulant on the exposed region and an upper sublayer of inorganic material on the lower sublayer. For roll-to-roll processing, a mechanically flexible, low-temperature substrate can be used.

Protecting semiconducting oxides

The roughness and structural height of printed metal lines is used to pin a fluid. This fluid deposits a top contact material which is connected to the bottom printed contacts through pinholes in the hydrophobic polymer layer. This results in a sandwich-like contact structure achieved in a self-aligned deposition process and having improved source-drain contact for all-additive printed circuits. In one form, the present technique is used for thin film transistor applications, but it may be applied to electrodes in general.

Method and structure for establishing contacts in thin film transistor devices

In layered structures, channel regions and light-interactive regions can include the same semiconductive polymer material, such as with an organic polymer. A light-interactive region can be in charge-flow contact with a contacting electrode region, and a channel region can, when conductive, provide an electrical connection between the contacting electrode region and other circuitry. For example, free charge carriers can be generated in the light-interactive region, resulting in a capacitively stored signal level; the signal level can be read out to other circuitry by turning on a transistor that includes the channel region. In an array of photosensing cells with organic thin film transistors, an opaque insulating material can be patterned to cover a data line and channel regions of cells along the line, but not extend entirely over the cells' light-interactive regions.

Producing layered structures with semiconductive regions or subregions

In transistor structures such as thin film transistors (TFTs) in an array of cells, a layer of semiconducting oxide material that includes a channel is protected by a protective layer that includes low-temperature encapsulant material. The semiconducting oxide material can be a transition metal oxide material such as zinc oxide, and can be in an active layered substructure that also includes channel end electrodes. The low-temperature encapsulant can, for example, be an organic polymer such as poly(methyl methacrylate) or parylene, deposited on an exposed region of the oxide layer such as by spinning, spin-casting, evaporation, or vacuum deposition or an inorganic polymer deposited such as by spinning or liquid deposition. The protective layer can include a lower sublayer of low-temperature encapsulant on the exposed region and an upper sublayer of inorganic material on the lower sublayer. For roll-to-roll processing, a mechanically flexible, low-temperature substrate can be used.

A system of diagnosing a printer or photocopying system using a flexible diagnostic sheet is described. In the system, a thin diagnostic sheet including a plurality of sensors formed on the sheet is run through the paper path of the printing system. The printing system subjects the diagnostic sheet to the printing process, including the deposition of fuser oil and toner on the sheet. Sensors on the sheet record various parameters, including but not limited to the amount of fuser oil deposited and the charge on various toner particles. The information is transmitted to service personnel or the printer end user to enable timely repair of the printer.

Flexible diagnostic sensor sheet

Printing method for high performance electronic devices

Growing community of inventors

Santa Barbara, CA, United States of America

Michael L Chabinyc