Dow Corning Corporation

Dow Silicones Corporation

Michael L Bradford

Eric S Moyer

Sheng Wang

Craig Rollin Yeakle

Fengqiu Fan

Donald Taylor Liles

Wei Rong

Kasumi Takeuchi

Junying Liu

Afrooz A Zarisfi

Takeaki Tsuda

Yin Tang

William Schulz

Ryan F Schneider

Arianne Edlai R Tan

Brian R Harkness, Jr

Eric Scott Moyer

Arianne Edlai Tan

A branched polyorganosiloxane having, on average, at least two radical-curable groups per molecule and a curable silicone composition that comprises (I) the branched polyorganosiloxane and (II) a radical initiator. Cured products prepared therefrom. Devices containing the branched polyorganosiloxane, composition, or cured product. Methods of making the branched polyorganosiloxane and composition and methods of using and uses of the materials and devices.

Branched polyorganosiloxanes and related curable compositions, methods, uses, and devices

An optical element comprises an antireflective layer that is disposed on and in contact with a substrate. The antireflective layer has a refractive index of greater than 1 to less than 1.41 and has a pore size ranging from greater than 0 to less than 300 nm. The antireflective layer includes an outermost surface having a water contact angle ranging from greater than or equal to 70&#xb0; to less than or equal to 120&#xb0; as determined using ASTM 5946-04.

Optical element

Non-aqueous emulsions comprise a continuous organic phase comprising an organic vehicle. The non-aqueous emulsions further comprise a discontinuous phase comprising a polyfluoropolyether silane. Methods of preparing surface treated articles therewith are also disclosed.

Non-aqueous emulsions and methods of preparing surface-treated articles

A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CFis used to 'etch back' the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing Oto etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

Method and materials for reverse patterning

A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CFto 'etch back' the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing Oto etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

A silsesquioxane resin comprised of the units (Ph(CH)SiO(OR')), (HSiO(OR&#x2032;))(MeSiO(OR&#x2032;))(RSiO(OR&#x2032;)), (RSiO(OR&#x2032;))where Ph is a phenyl group, Me is a methyl group; R&#x2032; is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and Ris selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q=1.

Silsesquioxane resins

Growing community of inventors

Midland, MI, United States of America

Michael L Bradford