Intel Corporation

Adsem, Inc.

Michael Kozhukh

Oleg B Rashkovskiy

David B Chung

Sergei Rutman

Michael Shkolnikov

Kenneth Edward Salsman

Eyal Ginsburg

Alexander Talalaevsky

In one embodiment, a thermistor probe includes a probe body, a high temperature NTC semiconductor thermistor attached to the probe body, and at least two conductive leads attached to the high temperature NTC semiconductor thermistor.

High temperature thermistor probe

A method of manufacturing high temperature thermistors. A polycrystalline thermistor body is formed from a material selected from a list consisting of bulk polycrystalline Si with intrinsic conductivity and bulk polycrystalline Ge with intrinsic conductivity. At least one ohmic contact is formed on at least one surface of the polycrystalline thermistor body.

Methods of manufacturing high temperature thermistors

A high temperature NTC thermistor includes a polycrystalline thermistor body, selected from a list consisting of polycrystalline Si with intrinsic conductivity and polycrystalline Ge with intrinsic conductivity. At least one ohmic contact is disposed on at least one surface of the polycrystalline thermistor body.

High temperature thermistors

Improved semiconductor reflectance arrangements (e.g., semiconductor devices, systems including semiconductor devices, methods, etc.).

On-die reflectance arrangements

A method of manufacturing high temperature thermistors from an ingot. The high temperature thermistors can be comprised of germanium or silicon. The high temperature thermistors have at least one ohmic contact.

Method of forming high temperature thermistors

An apparatus for temperature measurement comprising at least one insulator, at least one thermistor attached to the insulator, the thermistor having at least one of a Ge NTC die and an Si NTC die, and at least one outer electrically conductive film attached to the insulator and electrically coupled to the thermistor.

NTC thermistor probe

Processes for fabricating a semiconductor device are described herein. In one aspect of the invention, an exemplary process includes forming an interface layer overlying the device substrate, forming a silver layer overlying the interface layer, annealing the substrate to form an intermetallic layer between the silver layer and the interface layer, the silver layer is in intimate contact with the intermetallic layer, and forming a protection layer overlying the silver layer. Other interconnect structures and processes are also described.

Interconnect structures in a semiconductor device and processes of formation

A method of detecting a distortion on a surface is described. A layer of liquid crystal material is formed on the surface with molecules of the material aligned in planes parallel to the surface. The molecules in each select plane have axes aligned with one another. A phase shift of electromagnetic radiation is detected. The phase shift is due to a distortion in the alignment of the molecules out of a select plane in a region of and due to the distortion on the surface.

Method of detecting a distortion on a surface

An LCOS display, including specially manufactured spacers, and a process for making the display, are disclosed. The spacers ensure a uniform cell gap along the entire display. The spacers occupy a region between pixels, such that they do not interfere with light modulation and are not visible during magnification. The spacers are manufactured using known deposition, lithography and etching techniques, and are made from widely available materials. The process results in a high yield of high-quality LCOS displays.

Integrated spacer technology for LCOS light modulators

Optical components may be made with reflectors that increase the reflectivity of the resulting device. Increasing in the reflectivity may reduce the need for higher power light sources. In particular, the use of deposited silver layers may dramatically increase the reflectivity compared to aluminum and copper alloys. In addition, an absorptive layer may be positioned over the reflective layer to reduce the amount of blue light output from the reflector. This blue light absorber may be used to automatically rebalance light sources that produce an excessive proportion of blue light.

Highly reflective optical components

A lithography system for forming geometric patterns on a workpiece is described herein. The lithography system may include a reflective liquid crystal display comprising an array of configurable pixels, a radiation source for directing radiation onto the reflective liquid crystal display, a projection system for reducing a radiation pattern reflected by the reflective liquid crystal display and projecting the reduced radiation pattern onto a workpiece, and a stage for holding the workpiece. The lithography system may be used to form geometric patterns on a substrate during semiconductor fabrication.

Reflective liquid crystal display lithography system

Liquid crystal on silicon (LCOS) cells include a plurality of pixel elements formed between substrates. Spacers are formed on a portion of some of the pixel elements and positioned in the cell gap. The spacers on each of these LCOS cells reflecting different colors are formed in different locations in each cell. The result is that substantially none of the spacers create overlapping dead spots in a composite image. The spacers are further distributed among these pixel elements such that spacers are absent from some pixel elements and such that there is a substantially uniform thickness in the cell gaps. The reduced severity of the dead spots in the composite image as a result of the spacers in different locations, the reduced size and number of the spacers, and the uniformity in the cell gaps provide higher optical image quality.

Growing community of inventors

Palo Alto, CA, United States of America

Michael Kozhukh