Rudolph Technologies, Inc.

University of Colorado

Brown University

Onto Innovation Inc.

Michael Kotelyanskii

Manjusha Mehendale

Priya Mukundhan

Robin Mair

Christopher J Morath

Robert Gregory Wolf

Todd William Murray

Guray Tas

Michael Colgan

George Andrew Antonelli

Humphrey J Maris

Jacob D Dove

Sean P Leary

Guenadiy Lazarov

Wei Zhou

Xueping Ru

Jim Onderko

Roman Basistyy

Jonathan Cohen

Tong Zheng

Andre D Miller

Timothy Kryman

Jamie I Ludke

Yanwen Hou

Jamie L Ludke

Systems and methods for inspecting or characterizing samples, such as by characterizing patterned features or structures of the sample. In an aspect, the technology relates to a method for characterizing a patterned structure of a sample. The method includes directing a pump beam to a first position on a surface of the sample to induce a surface acoustic wave in the sample and directing a probe beam to a second position on the sample, where the probe beam is affected by the surface acoustic wave when the probe beam reflects from the surface of the sample. The method also includes detecting the reflected probe beam, analyzing the detected reflected probe beam to identify a frequency mode in the reflected probe beam, and based on the identified frequency mode, determining at least one of a width or a pitch of a patterned feature in the sample.

Characterization of patterned structures using acoustic metrology

Methods and systems for manufacturing and analyzing interconnect structures in integrated circuit (IC) devices. The methods include forming an interconnect structure, such as a pillar, in an IC device. The pillar is analyzed using an opto-acoustic sensor to quantify physical characteristics used to determine whether the pillar satisfies predetermined quality criterion. The analysis includes capturing an opto-acoustic signal from the pillar and estimating optical parameters for a number of local maxima of the signal. A mode may then be fitted for each of the identified local maxima based on the optical characteristics. The modes and estimated optical parameters may then be iteratively corrected in an order from strongest to weakest local maximum. The corrected values may then be compared to a predicted physical model to identify the physical characteristics of the pillar. If the physical characteristics fall outside of the quality criterion, manufacturing processes may be altered.

Opto-acoustic metrology of signal attenuating structures

Advanced interconnect technologies such as Through Silicon Vias (TSVs) have become an integral part of 3-D integration. Methods and systems and provided for laser-based acoustic techniques in which a short laser pulse generates broadband acoustic waves that propagate in the TSV structure. An optical interferometer detects the surface displacement caused by the acoustic waves reflecting within the structure as well as other acoustic waves traveling near the surface that has information about the structure dimensions and irregularities, such as voids. Features of voids, such as their location, are also identified based on the characteristics of the acoustic wave as it propagates through the via. Measurements typically take few seconds per site and can be easily adopted for in-line process monitoring.

Non-destructive acoustic metrology for void detection

A system and method for identifying one or more characteristics of a structure formed into a substrate is herein disclosed. Surface and bulk acoustic waves are induced in the substrate and travel past a structure of interest where the acoustic waves are sensed. Information concerning one or more characteristics of the structure is encoded in the wave. The encoded information is assessed to determine the characteristic of interest.

Optical acoustic substrate assessment system and method

An automatically adjustable method for use in opto-acoustic metrology or other types of metrology operations is described. The method includes modifying the operation of a metrology system that uses a PSD style sensor arrangement. The method may be used to quickly adjust the operation of a metrology system to ensure that the data obtained therefrom are of the desired quality. Further, the method is useful in searching for and optimizing data that is or can be correlated to substrate or sample features or characteristics that of interest. Apparatus and computer readable media are also described.

Position sensitive detection optimization

A system for imposing and analyzing surface acoustic waves in a substrate to determine characteristics of the substrate is disclosed. Optical elements and arrangements for imposing and analyzing surface acoustic waves in a substrate are also disclosed. NSOM's, gratings, and nanolight elements may be used to impose surface acoustic waves in a substrate and may also be used to measure transient changes in the substrate due to the passage of surface acoustic waves therethrough.

Substrate analysis using surface acoustic wave metrology

A system for monitoring thin-film fabrication processes is herein disclosed. Diffraction of incident light is measured and the results are compared to a predictive model based on at least one idealized or nominal structure. The model and/or the measurement of diffracted incident light may be modified using the output of one or more additional metrology systems.

Multiple measurement techniques including focused beam scatterometry for characterization of samples

A method includes selecting one of performing ellipsometry or performing optical stress generation and detection. The method also includes, in response to selecting performing ellipsometry, applying at least one first control signal to a controllable retarder that modifies at least polarization of a light beam, and performing ellipsometry using the modified light beam. The method further includes, in response to selecting performing optical stress generation and detection, applying at least one second control signal to the controllable retarder, and performing optical stress generation and detection using the modified light beam. Apparatus and computer readable media are also disclosed.

Combination of ellipsometry and optical stress generation and detection

An optical metrology system is provided with a data analysis method to determine the elastic moduli of optically transparent dielectric films such as silicon dioxide, other carbon doped oxides over metal or semiconductor substrates. An index of refraction is measured by an ellipsometer and a wavelength of a laser beam is measured using a laser spectrometer. The angle of refraction is determined by directing a light pulse focused onto a wafer surface, measuring a first set of x, y, and zcoordinates, moving the wafer in the z direction, directing the light pulse onto the wafer surface and measuring a second set of x, yand zcoordinates, using the coordinates to calculate an angle of incidence, calculating an angle of refraction from the calculated angle of incidence, obtaining a sound velocity v, from the calculated angle of refraction and using the determined sound velocity v, to calculate a bulk modulus. Hardware calibration and adjustments for the optical metrology system are also provided in order to minimize the variation of the results from tool to tool down to about 0.5% or below.

Measuring elastic moduli of dielectric thin films using an optical metrology system

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Chatham, NJ, United States of America

Michael Kotelyanskii