Lam Research Corporation

Michael Kelly

Enrico Magni

Robert C Hefty

Michelle Lupan

Kenji Takeshita

Wan-Lin Chen

Tsuyoshi Aso

Seiji Kawaguchi

Thomas McClard

Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.

Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses

Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing

Growing community of inventors

Pleasanton, CA, United States of America

Michael Kelly