Densbits Technologies Ltd.

Diamond Shamrock Corporation

Avago Technologies General IP (singapore) Pte. Ltd.

Eltech Systems Corporation

Michael Katz

Hanan Weingarten

Shmuel Levy

Jean M Hinden

Jurgen F Gauger

Erez Sabbag

Ofir Avraham Kanter

Avi Steiner

Avigdor Segal

Henri B Beer

Ilan Bar

Eli Sterin

Jean-Marcel Hinden

A method of managing a non-volatile memory device, the method comprising: receiving data sectors; writing each data sector into a data block that is allocated to a memory space subset that is associated with the data sector; wherein the data block belongs to a buffer of the non-volatile memory device; maintaining a management data structure that comprises location metadata about a location of each data sector in the buffer; and merging, if a criterion is fulfilled and before the buffer becomes full, data sectors stored at different data blocks and belong to a same set of logical memory blocks into a sequential portion of the non-volatile memory device, wherein the sequential portion differs from the buffer.

Advanced management of a non-volatile memory

A method of managing a non-volatile memory module, the method may include: receiving data sectors during a set of at least one write transactions; selecting, out of the currently buffered portions, to-be-merged memory space portions and to-be-cleaned memory space portions; merging, for each to-be-merged memory space portion and before the buffer becomes full, data sectors that belong to the to-be-merged memory space portion into a sequential portion of the non-volatile memory module, wherein the sequential portion differs from the buffer; and copying, for each to-be-cleaned memory space and before the buffer becomes full, data sectors that belong to the to-be-cleaned memory space portion into a buffer block of the buffer.

A method, non-transitory computer readable medium and a system for managing a non-volatile memory device. The method includes receiving data sectors; writing the data sectors into a buffer of the non-volatile memory device; maintaining at least one management data structure that comprises (a) location metadata about a location of each data sector in the buffer (b) timing metadata for each memory space portion that includes at least one data sector that is currently buffered in the buffer, selecting a selected buffer block in response to the location metadata and the timing metadata; and merging, before the buffer becomes full, data sectors of all of the at least one certain memory space portion into a sequential portion of the non-volatile memory device thereby emptying the selected buffer block, wherein the sequential portion differs from the buffer.

Ordered merge of data sectors that belong to memory space portions

A method for converting a measured physical level of a cell into a logical value, in an array of memory cells storing physical levels which diminish over time, the method may include: determining extent of deterioration of the physical levels and determining thresholds accordingly for at least an individual cell in the array; and reading the individual cell including reading a physical level in said cell and converting said physical level into a logical value using at least some of said thresholds, wherein said determining extent of deterioration comprises storing predefined physical levels rather than data-determined physical levels in each of a plurality of cells and determining extent of deterioration by computing deterioration of said predefined physical levels.

Physical levels deterioration based determination of thresholds useful for converting cell physical levels into cell logical values in an array of digital memory cells

A flash memory apparatus that may include a plurality of memory portions, and a controller operative to reserve for data retention purposes, for at least a first duration of time, only certain memory portions; allocate data, during said first duration of time, only to said certain memory portions, thereby to define a retired memory portion for said first duration of time; determine to copy data from a certain memory portion to a retired memory portion based upon a relationship between effective cycle counts of the certain memory portion and the retired memory portion, an effective cycle count of any memory portion is responsive to a number of erase-write cycles and to an effective duration of time the memory portion had available to recover from erase-write cycles; and copy the data from the certain memory portion to the retired memory portion.

Systems and methods for temporarily retiring memory portions

A flash memory controller, a computer readable medium and a method for writing to a flash memory device, the method may include receiving multiple logical pages, each logical page having a logical address; determining to write a logical page into a selected physical page of the flash memory device; calculating a hash value for each logical page of the multiple logical pages in response to (a) a logical address of the logical page and (b) a physical page index, to provide multiple hash values of the multiple logical pages.

Methods, systems and computer readable medium for writing and reading data

A method for programming data into a first plurality of rows within a second plurality of erase sectors of a flash memory device using a programming process having at least one selectable parameter, the method includes characterizing each of at least one row subsets, each row subset comprising at least one row from among said first plurality of rows, thereby to generate at least one row subset characteristic value; and programming data into at least a portion of at least one individual row belonging to at least one row subset, using a programming process having at least one selectable parameter, said at least one selectable parameter being set at least partly in accordance with the row subset characteristic value characterizing a row subset to which said individual row belongs; wherein at least two row subsets of an array of flash memory cells differ from each other by their row subset characteristic values.

Methods for adaptively programming flash memory devices and flash memory systems incorporating same

A method for reading at least one page within an erase sector of a flash memory device, the method comprising computing at least one mock reading threshold; using the at least one mock reading threshold to perform at least one mock read operation of at least a portion of at least one page within the erase sector, thereby to generate a plurality of logical values; defining a set of reading thresholds based at least partly on the plurality of logical values; and reading at least one page in the erase sector using the set of reading thresholds.

System and methods employing mock thresholds to generate actual reading thresholds in flash memory devices

A method for programming a plurality of data sequences into a corresponding plurality of flash memory functional units using a programming process having at least one selectable programming duration-controlling parameter controlling the duration of the programming process for a given data sequence, the method comprising providing at least one indication of at least one varying situational characteristic and determining a value for said at least one selectable programming duration-controlling parameter controlling the duration of the programming process for a given data sequence, for each flash memory functional unit, depending at least partly on said indication of said varying characteristic; and, for each individual flash memory functional unit from among said plurality of flash memory functional units, programming a sequence of bits into said individual flash memory functional unit using a programming process having at least one selectable parameter, said at least one selectable parameter being set at said value determined for said individual flash memory functional unit.

A method, computer readable medium storing instructions and system for managing flash memory. Data sector are received and each is written into a data block of a buffer of a non-volatile memory device. Pointers in a data management structure are created for each data sector corresponding to an associated logical block and a storage location of the data sector in the buffer. When a predefined criterion is fulfilled before the buffer becomes full, a number of logical blocks to be merged is determined and data sectors corresponding to the number of logical blocks to be merged are written from the buffer to a primary non-volatile data storage memory of the non-volatile memory device.

System and method for managing a non-volatile memory

A method for decoding a plurality of flash memory cells which are error correction-coded, the method may include: comparing physical values residing in the plurality of flash memory cells to a first set of decision thresholds thereby to provide a first item of comparison information for each of the plurality of cells; comparing physical values residing the plurality of flash memory cells to a second set of decision thresholds, thereby to provide a second item of comparison information for each of the plurality of cells, wherein neither of the first and second sets of decision thresholds is a subset of the other; and determining logical values for the plurality of flash memory cells by combining said first and second items of comparison information.

Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated BCH codes and/or designation of 'first below' cells

A low power Chien searching method employing Chien search circuitry comprising at least two hardware components that compute at least two corresponding bits comprising a Chien search output, the method comprising activating only a subset of the hardware components thereby to compute only a subset of the bits of the Chien search output; and activating hardware components other than those in the subset of hardware components, to compute additional bits of the Chien search output other than the bits in the subset of bits, only if a criterion on the subset of the bits of the Chien search output is satisfied.

Low power chien-search based BCH/RS decoding system for flash memory, mobile communications devices and other applications

A system and method are provided for data recovery in a multi-level cell memory device. One or more bits may be programmed sequentially in one or more respective levels of multi-level cells in the memory device. An interruption of programming a subsequent bit in a subsequent second or greater level of the multi-level cells may be detected. Data may be recovered from the multi-level cells defining the one or more bits programmed preceding the programming interruption of the second or greater level.

System and method for data recovery in multi-level cell memories

A system and method for adjusting read threshold voltage values, for example, in a read circuit internal to a memory device. The quality of an associated read result may be estimated for each read threshold voltage value used to read memory cells. Only read results estimated to have sufficient quality may be allowed to pass to storage. The read threshold voltage value may be adjusted for subsequent read operations, for example, if the associated read result is estimated to have insufficient quality. The read threshold voltage value may be iteratively adjusted, for example, until a read result is estimated to have sufficient quality.

System and method for adjusting read voltage thresholds in memories

A method, system and computer-readable medium are provided for reading information from a memory unit. A request may be received to read information from a set of memory cells in the memory unit. At least one read threshold in an initial set of read thresholds may be perturbed to generate a perturbed set of read thresholds. The set of memory cells may be read using the perturbed set of read thresholds to provide a read result. The performance of said reading may be evaluated using the perturbed set of read thresholds. The at least one read threshold may be iteratively perturbed for each sequential read operation that the read performance is evaluated to be sub-optimal.

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Haifa, Israel

Michael Katz