USA as Represented by Secretary of the Navy

Michael K Yakes

Robert J Walters

Phillip P Jenkins

Cory D Cress

María González

Jeffrey H Warner

Matthew Lumb

Antonio Marti Vega

Elisa Antolín Fernández

Louise C Hirst

Esther López Estrada

Scott R Messenger

Christopher Bailey

Kenneth Schmieder

Phillip Jenkins

Photovoltaic (PV) device comprising an ultra-thin radiation-tolerant PV absorber mounted on a flexible film having an embedded persistent phosphor and having a plurality of interdigitated top and bottom contacts on the top of the PV absorber. The PV absorber is ultra-thin, e.g., typically having a thickness of 300 nm or less for a III-V-based absorber. The phosphor absorbs some of the photons incident on the device and then discharges them for use by the device in generating electrical power during times when the device is not illuminated by the sun.

Ultra-thin, flexible and radiation-tolerant eclipse photovoltaics

A semiconductor device that utilizes intraband photon absorption in quantum dots to provide a capacitive photodetector. The presence of the quantum dots creates confined energy states within the photodetector device. Electrons are trapped in these confined energy states. When the photodetector is illuminated by light having an appropriate photon energy, the stored electrons are released to the conduction band, causing a change in the capacitance of the photodetector. By measuring this change in capacitance, light incident on the photodetector can be detected and quantified.

Capacitive infrared photodetector comprising a quantum dot layer

A device is described that includes sensors that are sensitive to displacement damage, and can be configured to display a characteristic damage curve. The sensors, or diodes, can be made of one or more semiconductor materials that are sensitive to displacement damage, and can be operated in dark illumination conditions. The sensors can have multiple shields of a specific or varied thickness. The shields can be formed in different configurations, though the shielding thickness can be designed to change the level of displacement damage absorbed by the sensors. The characteristic damage curve can provide a sensor response variable that displays a functional dependence on displacement damage. For example, the characteristic damage curve can provide a sensor response variable that is one or more currents measured at one or more fixed voltages, or one or more voltages measured at one or more fixed currents.

Microelectronic displacement damage dose detector

A strain-balanced quantum well tunnel junction (SB-QWTJ) device. QW structures are formed from alternating quantum well and barrier layers situated between nand players in a tunnel junction formed on a substrate. The quantum well layers exhibit a compressive strain with respect to the substrate, while the barrier layers exhibit a tensile strain. The composition and layer thicknesses of the quantum well and barrier layers are configured so that the compressive and tensile strains in the structure are balanced.

Tunnel diodes incorporating strain-balanced, quantum-confined heterostructures

Growing community of inventors

Alexandria, VA, United States of America

Michael K Yakes