Semitool, Inc.

Cascade Microtech, Inc.

Other

Michael K Jolley

Gary L Curtis

Brian Aegerter

Curt T Dundas

Tom L Ritzdorf

Kenneth R Smith

Steven L Peace

Victoria Van Syckel

Raymon F Thompson

A probe head including an elastic membrane capable of exerting a restoring force when one of the surfaces of the elastic membrane is distorted. A conductive probe includes a beam having a first end and a second end, with a probe tip proximate the first end for contacting a device under test. A beam contact proximate the second end of the beam. The beam being movable to deform at least one surface of the elastic membrane.

Probe head having a membrane suspended probe

A method for rinsing and drying a workpiece includes placing the workpiece into a chamber and spinning the workpiece. A rinsing fluid, such as water, is applied onto the workpiece through a first outlet in the chamber, with the rinsing fluid moving outwardly towards the edge of the workpiece via centrifugal force, to rinse the workpiece. A drying fluid, such as an alcohol vapor, is applied onto the workpiece through the first outlet, with the drying fluid moving outwardly towards the edge of the workpiece via centrifugal force, to dry the workpiece. The drying fluid advantageously follows a meniscus of the rinsing fluid across the workpiece surface. The rinsing fluid, or the drying fluid, or both fluids, may be applied near or at a central area of the workpiece.

Methods and apparatus for rinsing and drying

This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Selective treatment of microelectric workpiece surfaces

In a method for cleaning a copper surface of a semiconductor wafer or article, nitrogen gas is bubbled or dissolved into a strong alkaline solution, displacing dissolved oxygen from the solution. A nitrogen gas environment is provided over the copper surface. The alkaline solution is then applied to the copper surface. The copper etch rate is greatly reduced. The method is useful in removing residual polishing slurry after a chemical-mechanical polishing step, and for removing residues left in via holes after plasma etching.

Method for cleaning copper surfaces

Selective treatment of microelectronic workpiece surfaces

In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece while the workpiece and a reactor holding the workpiece are spinning. The flow rate of the processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Selective treatment of the surface of a microelectronic workpiece

A mixture for cleaning slurries left on the surface of a semiconductor wafer, after a polishing step, includes a caustic, an anionic surfactant, a non-ionic surfactant, and water. The caustic provides an etch rate on the surface to be cleaned in the range of 1-100 Angstroms per minute. The ionic concentration of the caustic ranges from 0.5N to 0.000001N. The caustic etches the surface. The anionic surfactant prevents particle redeposition. The non-ionic surfactant inhibits pitting of the backside of the wafers, if they have exposed silicon or polysilicon.

Cleaning solutions and methods for semiconductor wafers

A method for use in the manufacture of a microelectronic device is set forth. The method include to a first step in which a workpiece including exposed metallized surfaces and residues is provided. The workpiece, including the exposed metallized surfaces, is then treated with an alkaline, water-based solution containing one or more components that form an additive layer of an anti-corrosive compound on the exposed metallized surfaces. The solution reacts with the residues and assists in removing them from the workpiece. When the surfaces are principally include of aluminum, the solution may be include of DI water, an ammonium hydroxide based component, such as TMAH, silicic acid, and aluminum hydroxide.

Solution for cleaning metallized microelectronic workpieces and methods of using same

A method for use in the manufacture of a microelectronic device is set forth. The method includes a first step in which a workpiece including exposed aluminum metallized surfaces and residues is provided. The workpiece, including the exposed aluminum metallized surfaces, is then treated with an alkaline, water-based solution containing one or more components that form an aluminosilicate on the exposed aluminum metallized surfaces. The solution reacts with the residues and assists in removing them from the workpiece. Preferably, the solution is comprised of DI water, and ammonium hydroxide based component, such as TMAH, silicic acid, and aluminum hydroxide.

Non-corrosive cleaning method for use in the manufacture of microelectronic device

A method for use in the manufacture of a microelectronic device is set forth. The method include to a first step in which a workpiece including exposed aluminum metallized surfaces and residues is provided. The workpiece, including the exposed aluminum metallized surfaces, is then treated with an alkaline, water-based solution containing one or more components that form an aluminosilicate on the exposed aluminum metallized surfaces. The solution reacts with the residues and assists in removing them from the workpiece. Preferably, the solution is comprised of DI water, and ammonium hydroxide based component, such as TMAH, silicic acid, and aluminum hydroxide.

Alkaline water-based solution for cleaning metallized microelectronic

Methods for removing particulates from the surfaces of semiconductor materials, such as silicon substrates and wafers. The methods use repeated oxide growth steps and intervening oxide removal. Rinses are preferably used between the oxide growth and removal steps, such as with purified water. The oxide growth steps use an oxidation agent and a base, for example hydrogen peroxide and ammonium hydroxide. The oxide removal steps use a suitable oxide removal agent such as a hydrogen halide acid, for example hydrogen fluoride.

Growing community of inventors

Kalispell, MT, United States of America

Michael K Jolley